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MMBT4403-6AF

Public Made by Adom

by adom

FOSAN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT4403-6AF

FOSAN · Bipolar (BJT) · SOT-23

MMBT4403-6AF from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP switching transistor; the page 1 symbol shows B at the bottom-left lead of the SOT-23 outline, and the Emitter-Base Voltage (VEBO) limit is -5 V.
2 E passive Emitter of the PNP transistor; the page 1 symbol shows E at the bottom-right lead, with a VEBO limit of -5 V.
3 C passive Collector of the PNP transistor on the single top lead, rated for IC of -600 mA, VCBO of -40 V and VCEO of -40 V.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -40 V 1
Collector-Emitter Voltage VCEO -40 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current IC -600 mA 1
Power dissipation PC 250 mW Ta=25℃ 1
Thermal Resistance Junction-Ambient RΘJA 500 ℃/W 1
Junction and Storage Temperature TJ,Tstg -55 150 ℃ 1
Collector-Base Breakdown Voltage BVCBO -40 V IC= -10uA, IE=0 2
Collector-Emitter Breakdown Voltage BVCEO -40 V IC= -1mA, IB=0 2
Emitter-Base Breakdown Voltage BVEBO -5 V IE= -10uA, IC=0 2
Collector-Base Leakage Current ICBO -100 nA VCB= -35V, IE=0 2
Collector-Emitter Leakage Current ICEX -100 nA VCE= -35V, VBE=0.5V 2
Emitter-Base Leakage Current IEBO -100 nA VEB= -4V, IC=0 2
DC Current Gain HFE 100 300 VCE= -2V, IC=-150mA 2
DC Current Gain HFE 30 VCE= -1V, IC= -0.1mA 2
DC Current Gain HFE 20 VCE= -2V, IC= -500mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.6 V IC= -500mA, IB= -50mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.4 V IC= -150mA, IB= -15mA 2
Base-Emitter Saturation Voltage VBE(sat) -2.6 V IC= -500mA, IB= -50mA 2
Base-Emitter Saturation Voltage VBE(sat) -1.3 V IC= -150mA, IB= -15mA 2
Transition Frequency fT 200 MHZ VCE= -20V, IC= -20mA 2
Delay Time td 10 ns VCC= -30V, VBE=0.5V, IC= -150mA, IB1= -15mA 2
Rise Time tr 25 ns VCC=-30V, VBE=0.5V, IC= -150mA, IB1= -15mA 2
Storage Time ts 225 ns VCC= -30V, IC= -150mA, IB1=IB2= -15mA 2
Fall Time tf 60 ns VCC= -30V, IC= -150mA, IB1=IB2= -15mA 2

CAD (KiCad official)

  • Symbol: MMBT4403-6AF
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt4403-6af-etched.step / mmbt4403-6af-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt4403-6af.step / mmbt4403-6af.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (4 pp, sha256 4b57a5a70a272267, retrieved 2026-10-21, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF