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MMBT4403-13-F

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Diodes Incorporated Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT4403-13-F

Diodes Incorporated · Bipolar Transistors - BJT · SOT-23

MMBT4403-13-F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; the datasheet rates VEBO at -6 V and BVEBO at -6 V minimum.
2 E passive Emitter of the PNP transistor; the datasheet rates VEBO at -6 V.
3 C passive Collector of the PNP transistor; the datasheet rates VCBO and VCEO at -40 V and continuous IC at -600 mA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO -40 V IC = -100A 3
Collector-Emitter Breakdown Voltage BVCEO -40 V IC = -10mA 3
Emitter-Base Breakdown Voltage BVEBO -6 V IE = -100A 3
Collector Cutoff Current ICEX -100 nA VCE = -35V, VEB(off) = -0.4V 3
Base Cutoff Current IBL -100 nA VCE = -35V, VEB(off) = -0.4V 3
DC Current Gain (IC = -100µA, VCE = -1V) hFE 30 IC = -100µA, VCE = -1V 3
DC Current Gain (IC = -1.0mA, VCE = -1V) hFE 60 IC = -1.0mA, VCE = -1V 3
DC Current Gain (IC = -10mA, VCE = -1V) hFE 100 IC = -10mA, VCE = -1V 3
DC Current Gain (IC = -150mA, VCE = -2V) hFE 100 IC = -150mA, VCE = -2V 3
DC Current Gain (IC = -500mA, VCE = -2V) hFE 20 IC = -500mA, VCE = -2V 3
DC Current Gain (maximum, condition not printed) hFE 300 3
Collector-Emitter Saturation Voltage VCE(sat) -0.4 V IC = -150mA, IB = -15mA 3
Collector-Emitter Saturation Voltage VCE(sat) -0.75 V IC = -500mA, IB = -50mA 3
Base-Emitter Saturation Voltage VBE(sat) -0.75 V IC = -150mA, IB = -15mA 3
Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC = -150mA, IB = -15mA 3
Base-Emitter Saturation Voltage VBE(sat) -1.3 V IC = -500mA, IB = -50mA 3
Output Capacitance Cobo 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 3
Input Capacitance Cibo 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 3
Input Impedance hie 1.5 15 k VCE = -10V, IC = -1mA, f = 1kHz 3
Voltage Feedback Ratio hre 0.1 8 x 10-4 VCE = -10V, IC = -1mA, f = 1kHz 3
Small Signal Current Gain hfe 60 500 3
Output Admittance hoe 1 100 S VCE = -10V, IC = -1mA, f = 1kHz 3
Current Gain-Bandwidth Product fT 200 MHz VCE = -10V, IC = -20mA, f = 100MHz 3
Delay Time td 15 ns VCC = -30V, IC = -150mA, VBE(off) = -2V, IB1 = -15mA 3
Rise Time tr 20 ns VCC = -30V, IC = -150mA, VBE(off) = -2V, IB1 = -15mA 3
Storage Time ts 225 ns VCC = -30V, IC = -150mA, IB1 = -IB2 = -15mA 3
Fall Time tf 30 ns VCC = -30V, IC = -150mA, IB1 = -IB2 = -15mA 3
Collector-Base Voltage VCBO -40 V 2
Collector-Emitter Voltage VCEO -40 V 2
Emitter-Base Voltage VEBO -6 V 2
Collector Current - Continuous IC -600 mA 2
Operating and Storage Temperature Range TJ,TSTG -55 150 C 2
Collector Power Dissipation PD 310 mW Note 6 (15mm x 15mm x 1.6mm FR4 PCB, still air) 2
Collector Power Dissipation PD 350 mW Note 5 (minimum recommended pad layout FR4 PCB, still air) 2
Thermal Resistance, Junction to Ambient RθJA 403 C/W Note 6 (15mm x 15mm x 1.6mm FR4 PCB, still air) 2
Thermal Resistance, Junction to Ambient RθJA 357 C/W Note 5 (minimum recommended pad layout FR4 PCB, still air) 2
Thermal Resistance, Junction to Leads RθJL 350 C/W Note 7 (junction to solder point) 2
Thermal Resistance, Junction to Case RθJC 55 C/W Note 5 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: MMBT4403-13-F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt4403-13-f-etched.step / mmbt4403-13-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt4403-13-f.step / mmbt4403-13-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 842c4b50b8984698, retrieved 2026-10-25, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF