component

MMBT4401W

Public Made by Adom

by adom

CBI Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT4401W

CBI · Bipolar (BJT) · SOT-323

MMBT4401W from CBI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet's absolute maximum emitter-base voltage VEBO is 6 V.
2 EMITTER passive Emitter terminal of the NPN transistor; the datasheet's emitter-base breakdown voltage V(BR)EBO is 6 V minimum at IE=100µA with IC=0.
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet's maximum collector current IC is 600 mA and collector-base voltage VCBO is 60 V.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 60 V 1
Collector-emitter voltage VCEO 40 V 1
Emitter-base voltage VEBO 6 V 1
Collector current IC 600 mA 1
Collector power dissipation PC 200 mW 1
Junction temperature Tj 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1
Thermal resistance, junction to ambient RΘJA 625 ℃/W 1
Collector-base breakdown voltage V(BR)CBO 60 V IC=100µA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 40 V IC=1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE=100µA, IC=0 1
Collector cut-off current ICBO 100 nA VCB=35V, IE=0 1
Collector cut-off current ICEO 500 nA VCE=35V, IB=0 1
DC current gain hFE 20 VCE=1V, IC=100µA 1
DC current gain hFE 40 VCE=1V, IC=1mA 1
DC current gain hFE 80 VCE=1V, IC=10mA 1
DC current gain hFE 100 300 VCE=1V, IC=150mA 1
Collector-emitter saturation voltage VCE(sat) 0.4 V IC=150mA, IB=15mA 1
Collector-emitter saturation voltage VCE(sat) 0.75 V IC=500mA, IB=50mA 1
Base-emitter saturation voltage VBE(sat) 0.75 0.95 V IC=150mA, IB=15mA 1
Base-emitter saturation voltage VBE(sat) 1.2 V IC=500mA, IB=50mA 1
Transition frequency fT 250 MHz VCE=10V, IC=20mA, f=100MHz 1
Collector output capacitance Cob 6.5 pF VCB=5V, IE=0, f=1MHz 1

CAD (KiCad official)

  • Symbol: MMBT4401W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: mmbt4401w-etched.step / mmbt4401w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt4401w.step / mmbt4401w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (3 pp, sha256 05ac0bbf7b6cf7df, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF