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MMBT4401Q-13-F

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Diodes Incorporated Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

markdown

MMBT4401Q-13-F

Diodes Incorporated · Bipolar (BJT) · SOT-23

MMBT4401Q-13-F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the NPN transistor; the datasheet limits base current to a peak IBM of 200 mA.
2 E passive Emitter terminal of the NPN transistor; the datasheet limits emitter-base voltage to VEBO 6.0 V.
3 C passive Collector terminal of the NPN transistor; the datasheet limits collector current to 600 mA continuous (IC) and 1 A peak (ICM), with VCEO 40 V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 60 V 2
Collector-Emitter Voltage VCEO 40 V 2
Emitter-Base Voltage VEBO 6 V 2
Collector Current IC 600 mA 2
Peak Collector Current ICM 1 A 2
Peak Base Current IBM 200 mA 2
Operating and Storage Temperature Range TJ,TSTG -55 150 C 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A (Note 8) 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C (Note 8) 2
Power Dissipation PD 310 mW Note 5: min recommended pad layout, 1oz Cu, single-sided FR4, still air 2
Power Dissipation PD 350 mW Note 6: 15mm x 15mm 1oz copper 2
Thermal Resistance, Junction to Ambient RθJA 403 C/W Note 5: min recommended pad layout, 1oz Cu, single-sided FR4, still air 2
Thermal Resistance, Junction to Ambient RθJA 357 C/W Note 6: 15mm x 15mm 1oz copper 2
Thermal Resistance, Junction to Leads RθJL 350 C/W Note 7: junction to solder-point at end of leads 2
Thermal Resistance, Junction to Case RθJC 120 C/W Note 5 2
Collector-Base Breakdown Voltage BVCBO 60 V IC = 100μA, IE = 0 4
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 10.0mA, IB = 0 (Note 9) 4
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 100μA, IC = 0 4
Collector Cutoff Current ICEX 100 nA VCE = 35V, VEB(off) = 0.4V 4
Base Cutoff Current IBL 100 nA VCE = 35V, VEB(off) = 0.4V 4
DC Current Gain hFE 20 IC = 100µA, VCE = 1.0V 4
DC Current Gain hFE 40 IC = 1.0mA, VCE = 1.0V 4
DC Current Gain hFE 80 IC = 10mA, VCE = 1.0V 4
DC Current Gain hFE 100 IC = 150mA, VCE = 1.0V 4
DC Current Gain hFE 300 4
Collector-Emitter Saturation Voltage VCE(sat) 0.4 V IC = 150mA, IB = 15mA 4
Collector-Emitter Saturation Voltage VCE(sat) 0.75 V IC = 500mA, IB = 50mA 4
Base-Emitter Saturation Voltage VBE(sat) 0.75 0.95 V IC = 150mA, IB = 15mA 4
Base-Emitter Saturation Voltage VBE(sat) 1.2 V IC = 500mA, IB = 50mA 4
Output Capacitance Ccb 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 4
Input Capacitance Ceb 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 4
Input Impedance hie 1 15 kΩ VCE = 10V, IC = 1.0mA, f = 1.0kHz 4
Voltage Feedback Ratio hre 0.1 8 x 10-4 4
Small Signal Current Gain hfe 40 500 4
Output Admittance hoe 1 30 μS 4
Current Gain-Bandwidth Product fT 250 MHz VCE = 10V, IC = 20mA, f = 100MHz 4
Delay Time td 15 ns VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA 4
Rise Time tr 20 ns VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA 4
Storage Time ts 225 ns VCC = 30V, IC = 150mA, IB1 = -IB2 = 15mA 4
Fall Time tf 30 ns VCC = 30V, IC = 150mA, IB1 = -IB2 = 15mA 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: MMBT4401Q-13-F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt4401q-13-f-etched.step / mmbt4401q-13-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt4401q-13-f.step / mmbt4401q-13-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 b08a5ebd79d1f149, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF