component
MMBT4401LT3G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT4401LT3G
onsemi · Bipolar (BJT) · SOT-23
MMBT4401LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the NPN switching transistor, with emitter-base breakdown V(BR)EBO of at least 6.0 Vdc and VBE(sat) of 1.2 Vdc maximum at IC = 500 mAdc, IB = 50 mAdc. |
| 2 | EMITTER | passive | Emitter of the NPN switching transistor, with emitter-base voltage VEBO rated at 6.0 Vdc and emitter-base cutoff-related limits as stated in the electrical characteristics. |
| 3 | COLLECTOR | passive | Collector of the NPN switching transistor, rated for VCEO of 40 Vdc, VCBO of 60 Vdc, continuous collector current IC of 600 mAdc and peak ICM of 900 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc | 2 | |||
| Collector-Base Voltage | VCBO | 60 | Vdc | 2 | |||
| Emitter-Base Voltage | VEBO | 6 | Vdc | 2 | |||
| Collector Current - Continuous | IC | 600 | mAdc | 2 | |||
| Collector Current - Peak | ICM | 900 | mAdc | 2 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 2 | ||
| Total Device Dissipation, FR-5 Board | PD | 225 | mW | FR-5 Board (Note 1) @TA = 25°C | 2 | ||
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RJA | 556 | °C/W | FR-5 Board | 2 | ||
| Total Device Dissipation, Alumina Substrate | PD | 300 | mW | Alumina Substrate (Note 2) @TA = 25°C | 2 | ||
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RJA | 417 | °C/W | Alumina Substrate | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | Vdc | IC = 1.0 mAdc, IB = 0 | 3 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 | Vdc | IC = 0.1 mAdc, IE = 0 | 3 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | Vdc | IE = 0.1 mAdc, IC = 0 | 3 | ||
| Base Cutoff Current | IBEV | 0.1 | Adc | VCE = 35 Vdc, VEB = 0.4 Vdc | 3 | ||
| Collector Cutoff Current | ICEX | 0.1 | Adc | VCE = 35 Vdc, VEB = 0.4 Vdc | 3 | ||
| DC Current Gain | hFE | 20 | - | IC = 0.1 mAdc, VCE = 1.0 Vdc | 3 | ||
| DC Current Gain | hFE | 40 | - | IC = 1.0 mAdc, VCE = 1.0 Vdc | 3 | ||
| DC Current Gain | hFE | 80 | - | IC = 10 mAdc, VCE = 1.0 Vdc | 3 | ||
| DC Current Gain | hFE | 100 | 300 | - | IC = 150 mAdc, VCE = 1.0 Vdc | 3 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.4 | Vdc | IC = 150 mAdc, IB = 15 mAdc | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.75 | Vdc | IC = 500 mAdc, IB = 50 mAdc | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.75 | 0.95 | Vdc | IC = 150 mAdc, IB = 15 mAdc | 3 | |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | Vdc | IC = 500 mAdc, IB = 50 mAdc | 3 | ||
| Current-Gain-Bandwidth Product | fT | 250 | MHz | IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz | 3 | ||
| Collector-Base Capacitance | Ccb | 6.5 | pF | VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz | 3 | ||
| Emitter-Base Capacitance | Ceb | 30 | pF | VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz | 3 | ||
| Input Impedance | hie | 1 | 15 | k | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 3 | |
| Voltage Feedback Ratio | hre | 0.1 | 8 | X 10-4 | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 3 | |
| Small-Signal Current Gain | hfe | 40 | 500 | - | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 3 | |
| Output Admittance | hoe | 1 | 30 | mhos | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 3 | |
| Delay Time | td | 15 | ns | VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc | 3 | ||
| Rise Time | tr | 20 | ns | 3 | |||
| Storage Time | ts | 225 | ns | VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc | 3 | ||
| Fall Time | tf | 30 | ns | 3 |
CAD (KiCad official)
- Symbol:
MMBT4401LT3G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt4401lt3g-etched.step/mmbt4401lt3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt4401lt3g.step/mmbt4401lt3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (9 pp, sha256
eeb08625790ba6f4, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).