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MMBT4401G-AE3-R

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UTC Unisonic Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT4401G-AE3-R

UTC Unisonic Tech · Bipolar (BJT) · SOT-23

MMBT4401G-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter of the NPN transistor; the datasheet gives no emitter-specific limit, and the device is rated for an emitter-base voltage (VEBO) of 6 V maximum.
2 B passive Base of the NPN transistor; the device is rated for emitter-base voltage (VEBO) of 6 V and continuous collector current (IC) of 600 mA, with the base driven to reach the stated saturation points (e.g. IB = 50 mA at IC = 500 mA).
3 C passive Collector of the NPN transistor, rated for collector-base voltage (VCBO) of 60 V, collector-emitter voltage (VCEO) of 40 V, and continuous collector current (IC) of 600 mA.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 60 V 2
Collector-Emitter Voltage VCEO 40 V 2
Emitter-Base Voltage VEBO 6 V 2
Collector Current-Continuous IC 600 mA 2
Total Device Dissipation PD 350 mW 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -40 150 °C 2
Collector-Base Breakdown Voltage BVCBO 60 V IC=0.1mA, IE=0 2
Collector-Emitter Breakdown Voltage (note) BVCEO 40 V IC=1mA, IB=0 2
Emitter-Base Breakdown Voltage BVEBO 6 V IE=0.1mA, IC=0 2
DC Current Gain hFE1 20 VCE=1V, IC=0.1mA 2
DC Current Gain hFE2 40 VCE=1V, IC=1mA 2
DC Current Gain hFE3 80 VCE=1V, IC=10mA 2
DC Current Gain hFE4 100 300 VCE=1V, IC=150mA 2
Collector-Emitter Saturation Voltage VCE(SAT1) 0.4 V IC=150mA, IB=15mA 2
Collector-Emitter Saturation Voltage VCE(SAT2) 0.75 V IC=500mA, IB=50mA 2
Base-Emitter Saturation Voltage VBE(SAT1) 0.75 0.95 V IC=150mA, IB=15mA 2
Base-Emitter Saturation Voltage VBE(SAT2) 1.2 V IC=500mA, IB=50mA 2
Current Gain Bandwidth Product fT 250 MHz VCE=10V, IC=20mA, f=100MHz 2
Collector-Base Capacitance CCB 6.5 pF VCB=5V, IE=0, f=140kHz 2
Emitter-Base Capacitance CEB 30 pF VBE=0.5V, IC=0, f=140kHz 2
Input Impedance hIE 1 15 kΩ VCE=10V, IC=1mA, f=1kHz 2
Voltage Feedback Ratio hRE 0.1 8 ×10-4 VCE=10V, IC=1mA, f=1kHz 2
Small-Signal Current Gain hFE 40 500 VCE=10V, IC=1mA, f=1kHz 2
Output Admittance hOE 1 30 µmhos VCE=10V, IC=1mA, f=1kHz 2
Delay Time tD 15 ns VCC=30V, VEB=2V, IC=150mA, IB1=15mA 2
Rise Time tR 20 ns VCC=30V, VEB=2V, IC=150mA, IB1=15mA 2
Storage Time tS 225 ns 2
Fall Time tF 30 ns VCC=30V, IC=150mA, IB1=IB2=15mA 2
Junction to Ambient θJA 357 °C/W 2

CAD (KiCad official)

  • Symbol: MMBT4401G-AE3-R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt4401g-ae3-r-etched.step / mmbt4401g-ae3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt4401g-ae3-r.step / mmbt4401g-ae3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (6 pp, sha256 9ae3ca187cf904c1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF