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MMBT4401-6AF

Public Made by Adom

by adom

FOSAN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT4401-6AF

FOSAN · Bipolar (BJT) · SOT-23

MMBT4401-6AF from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; emitter-base breakdown voltage VEBO is 6 V and base-emitter saturation voltage is at most 1.2 V at IC=150 mA, IB=15 mA.
2 E passive Emitter of the NPN transistor, shown at the bottom right of the package symbol.
3 C passive Collector of the NPN transistor; VCEO is 40 V, VCBO is 60 V and IC is 600 mA maximum.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage BVCEO 40 V IC=1mA, IB=0 2
Collector-Base Breakdown Voltage BVCBO 60 V IC=10uA, IE=0 2
Emitter-Base Breakdown Voltage BVEBO 6 V IE=10uA, IC=0 2
Collector-Base Leakage Current ICBO 100 nA VCB=50V, IE=0 2
Collector-Emitter Leakage Current ICEX 100 nA VCE=35V, VBE=-3V 2
Emitter-Base Leakage Current IEBO 100 nA VEB=5V, IC=0 2
DC Current Gain HFE 100 300 VCE=1V, IC=150mA 2
DC Current Gain HFE 40 VCE=1V, IC=0.1mA 2
Collector-Emitter Saturation Voltage VCE(sat) 1 V IC=500mA, IB=50mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.3 V IC=150mA, IB=15mA 2
Base-Emitter Saturation Voltage VBE(sat) 2 V IC=500mA, IB=50mA 2
Base-Emitter Saturation Voltage VBE(sat) 1.2 V IC=150mA, IB=15mA 2
Transition Frequency fT 300 MHZ VCE=20V, IC=20mA 2
Delay Time td 10 ns VCC=30V, VBE=-0.5V, IC=150mA, IB1=15mA 2
Rise Time tr 25 ns VCC=30V, VBE=-0.5V, IC=150mA, IB1=15mA 2
Storage Time ts 225 ns VCC=30V, IC=150mA, IB1=IB2=15mA 2
Fall Time tf 60 ns VCC=30V, IC=150mA, IB1=IB2=15mA 2
Collector-Base Voltage VCBO 60 V 1
Collector-Emitter Voltage VCEO 40 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current IC 600 mA 1
Power dissipation PC 250 mW Ta=25℃ 1
Junction and Storage Temperature TJ,Tstg -55 150 ℃ 1
Thermal Resistance Junction-Ambient RΘJA 500 ℃/W 1

CAD (KiCad official)

  • Symbol: MMBT4401-6AF
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt4401-6af-etched.step / mmbt4401-6af-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt4401-6af.step / mmbt4401-6af.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (4 pp, sha256 cb4b301cb47cc0f2, retrieved 2026-10-21, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF