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MMBT4126LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT4126LT1G

onsemi · Bipolar (BJT) · SOT-23

MMBT4126LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP general-purpose transistor; the datasheet gives VEBO of −4 Vdc as the emitter-base limit and tests base current at IB = −5.0 mAdc for saturation.
2 EMITTER passive Emitter terminal of the PNP transistor, with a maximum emitter-base voltage rating of VEBO −4 Vdc.
3 COLLECTOR passive Collector terminal of the PNP transistor, rated for VCEO −25 Vdc, VCBO −25 Vdc and continuous collector current IC −200 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -25 Vdc 1
Collector-Base Voltage VCBO -25 Vdc 1
Emitter-Base Voltage VEBO -4 Vdc 1
Collector Current-Continuous IC -200 mAdc 1
Total Device Dissipation FR-5 Board PD 225 mW TA = 25°C, FR-5 Board (Note 1) 1
Derate above 25°C, FR-5 Board 1.8 mW/°C Derate above 25°C, FR-5 Board (Note 1) 1
Thermal Resistance, Junction-to-Ambient, FR-5 Board RJA 556 °C/W Note 1 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C, Alumina Substrate (Note 2) 1
Derate above 25°C, Alumina Substrate 2.4 mW/°C Derate above 25°C, Alumina Substrate (Note 2) 1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate RJA 417 °C/W Note 2 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Collector-Emitter Breakdown Voltage V(BR)CEO -25 Vdc IC = −1.0 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO -25 Vdc IC = −10 Adc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO -4 Vdc IE = −10 Adc, IC = 0 2
Collector Cutoff Current ICEX -50 nAdc VCE = −30 Vdc, VEB = −3.0 Vdc 2
DC Current Gain HFE 120 300 - IC = −2.0 mAdc, VCE = −1.0 Vdc 2
DC Current Gain HFE 60 - IC = −50 mAdc, VCE = −1.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) -0.4 Vdc IC = −50 mAdc, IB = −5.0 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) -0.95 Vdc IC = −50 mAdc, IB = −5.0 mAdc 2
Current-Gain-Bandwidth Product fT 250 MHz IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz 2
Output Capacitance Cobo 4.5 pF VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 10 pF VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz 2
Small-Signal Current Gain hfe 120 480 - IC = −2.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz 2
Small-Signal Current Gain hfe 2.5 - IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz 2
Noise Figure NF 4 dB IC = −100 Adc, VCE = −5.0 Vdc, RS = 1.0 k, f = 1.0 kHz 2

CAD (KiCad official)

  • Symbol: MMBT4126LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt4126lt1g-etched.step / mmbt4126lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt4126lt1g.step / mmbt4126lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 4167885f0bec4009, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF