component
MMBT3946DW
Public Made by Adomby adom
YFW Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
MMBT3946DW
YFW · Bipolar (BJT) · SOT-363
MMBT3946DW from YFW, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of one of the two transistors (Q1 NPN or Q2 PNP); the datasheet rates emitter-base voltage at 6 V and collector current at 200 mA maximum. |
| 2 | Base | passive | Base terminal of the same transistor as pin 1; emitter-base cutoff current is 50 nA max at VEB = 6 V and emitter-base breakdown is 6 V min at IE = 10 µA. |
| 3 | Collector | passive | Collector terminal of the same transistor as pins 1 and 2; collector-emitter breakdown is 40 V min at 1 mA, and collector current is 200 mA maximum. |
| 4 | Emitter | passive | Emitter terminal of the other transistor (Q1 NPN or Q2 PNP, whichever is not on pins 1-3); the datasheet rates emitter-base voltage at 6 V and collector current at 200 mA maximum. |
| 5 | Base | passive | Base terminal of the same transistor as pin 4; emitter-base cutoff current is 50 nA max at VEB = 6 V and emitter-base breakdown is 6 V min at IE = 10 µA. |
| 6 | Collector | passive | Collector terminal of the same transistor as pins 4 and 5; collector-emitter breakdown is 40 V min at 1 mA, and collector current is 200 mA maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Q1 (NPN) DC current gain, IC=0.1 mA | hFE | 40 | at VCE = 1 V, IC = 0.1 mA | 2 | |||
| Q1 (NPN) DC current gain, IC=1 mA | hFE | 70 | at VCE = 1 V, IC = 1 mA | 2 | |||
| Q1 (NPN) DC current gain, IC=10 mA | hFE | 100 | 300 | at VCE = 1 V, IC = 10 mA | 2 | ||
| Q1 (NPN) DC current gain, IC=50 mA | hFE | 60 | at VCE = 1 V, IC = 50 mA | 2 | |||
| Q1 (NPN) DC current gain, IC=100 mA | hFE | 30 | at VCE = 1 V, IC = 100 mA | 2 | |||
| Q1 (NPN) collector-base cutoff current | ICBO | 50 | nA | at VCB = 30 V | 2 | ||
| Q1 (NPN) emitter-base cutoff current | IEBO | 50 | nA | at VEB = 6 V | 2 | ||
| Q1 (NPN) collector-base breakdown voltage | V(BR)CBO | 60 | V | at IC = 10 µA | 2 | ||
| Q1 (NPN) collector-emitter breakdown voltage | V(BR)CEO | 40 | V | at IC = 1 mA | 2 | ||
| Q1 (NPN) emitter-base breakdown voltage | V(BR)EBO | 6 | V | at IE = 10 µA | 2 | ||
| Q1 (NPN) collector-emitter saturation voltage, IC=10 mA | VCE(sat) | 0.2 | V | at IC = 10 mA, IB = 1 mA | 2 | ||
| Q1 (NPN) collector-emitter saturation voltage, IC=50 mA | VCE(sat) | 0.3 | V | at IC = 50 mA, IB = 5 mA | 2 | ||
| Q1 (NPN) base-emitter saturation voltage, IC=10 mA | VBE(sat) | 0.65 | 0.85 | V | at IC = 10 mA, IB = 1 mA | 2 | |
| Q1 (NPN) base-emitter saturation voltage, IC=50 mA | VBE(sat) | 0.95 | V | at IC = 50 mA, IB = 5 mA | 2 | ||
| Q1 (NPN) current gain bandwidth product | fT | 300 | MHz | at VCE = 20 V, IC = 10 mA, f = 100 MHz | 2 | ||
| Q1 (NPN) collector output capacitance | Cob | 4 | pF | at VCB = 5 V, IE = 0, f = 1 MHz | 2 | ||
| Q1 (NPN) delay time | td | 35 | ns | at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA | 2 | ||
| Q1 (NPN) rise time | tr | 35 | ns | at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA | 2 | ||
| Q1 (NPN) storage time | ts | 200 | ns | at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA | 2 | ||
| Q1 (NPN) fall time | tf | 50 | ns | at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA | 2 | ||
| Q2 (PNP) DC current gain, IC=0.1 mA | hFE | 60 | at -VCE = 1 V, -IC = 0.1 mA | 3 | |||
| Q2 (PNP) DC current gain, IC=1 mA | hFE | 80 | at -VCE = 1 V, -IC = 1 mA | 3 | |||
| Q2 (PNP) DC current gain, IC=10 mA | hFE | 100 | 300 | at -VCE = 1 V, -IC = 10 mA | 3 | ||
| Q2 (PNP) DC current gain, IC=50 mA | hFE | 60 | at -VCE = 1 V, -IC = 50 mA | 3 | |||
| Q2 (PNP) DC current gain, IC=100 mA | hFE | 30 | at -VCE = 1 V, -IC = 100 mA | 3 | |||
| Q2 (PNP) collector-base cutoff current | -ICBO | 50 | nA | at -VCB = 30 V | 3 | ||
| Q2 (PNP) emitter-base cutoff current | -IEBO | 50 | nA | at -VEB = 6 V | 3 | ||
| Q2 (PNP) collector-base breakdown voltage | -V(BR)CBO | 40 | V | at -IC = 10 µA | 3 | ||
| Q2 (PNP) collector-emitter breakdown voltage | -V(BR)CEO | 40 | V | at -IC = 1 mA | 3 | ||
| Q2 (PNP) emitter-base breakdown voltage | -V(BR)EBO | 6 | V | at -IE = 10 µA | 3 | ||
| Q2 (PNP) collector-emitter saturation voltage, IC=10 mA | -VCE(sat) | 0.25 | V | at -IC = 10 mA, -IB = 1 mA | 3 | ||
| Q2 (PNP) collector-emitter saturation voltage, IC=50 mA | -VCE(sat) | 0.4 | V | at -IC = 50 mA, -IB = 5 mA | 3 | ||
| Q2 (PNP) base-emitter saturation voltage, IC=10 mA | -VBE(sat) | 0.65 | 0.85 | V | at -IC = 10 mA, -IB = 1 mA | 3 | |
| Q2 (PNP) base-emitter saturation voltage, IC=50 mA | -VBE(sat) | 0.95 | V | at -IC = 50 mA, -IB = 5 mA | 3 | ||
| Q2 (PNP) current gain bandwidth product | fT | 250 | MHz | at -VCE = 20 V, -IC = 10 mA, f = 100 MHz | 3 | ||
| Q2 (PNP) output capacitance | Cobo | 4.5 | pF | at -VCB = 5 V, IE = 0, f = 1 MHz | 3 | ||
| Q2 (PNP) delay time | td | 35 | ns | at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA | 3 | ||
| Q2 (PNP) rise time | tr | 35 | ns | at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA | 3 | ||
| Q2 (PNP) storage time | ts | 225 | ns | at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA | 3 | ||
| Q2 (PNP) fall time | tf | 75 | ns | at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA | 3 | ||
| Q1 (NPN) collector-base voltage | VCBO | 60 | V | Ta = 25℃ (Q1 maximum ratings) | 1 | ||
| Q1 (NPN) collector-emitter voltage | VCEO | 40 | V | Ta = 25℃ (Q1 maximum ratings) | 1 | ||
| Q1 (NPN) emitter-base voltage | VEBO | 6 | V | Ta = 25℃ (Q1 maximum ratings) | 1 | ||
| Q1 (NPN) collector current | IC | 200 | mA | Ta = 25℃ (Q1 maximum ratings) | 1 | ||
| Q2 (PNP) collector-base voltage | -VCBO | 40 | V | Ta = 25℃ (Q2 maximum ratings) | 1 | ||
| Q2 (PNP) collector-emitter voltage | -VCEO | 40 | V | Ta = 25℃ (Q2 maximum ratings) | 1 | ||
| Q2 (PNP) emitter-base voltage | -VEBO | 6 | V | Ta = 25℃ (Q2 maximum ratings) | 1 | ||
| Q2 (PNP) collector current | -IC | 200 | mA | Ta = 25℃ (Q2 maximum ratings) | 1 | ||
| Total power dissipation (Q1+Q2) | Ptot | 200 | mW | Ta = 25℃ (Q1Q2 maximum ratings) | 1 | ||
| Junction temperature | Tj | 150 | °C | Q1Q2 maximum ratings | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | Q1Q2 maximum ratings | 1 |
CAD (KiCad official)
- Symbol:
MMBT3946DW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mmbt3946dw-etched.step/mmbt3946dw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt3946dw.step/mmbt3946dw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YFW datasheet (6 pp, sha256
e16f308502815ee8, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMBT3946DW
**YFW** · Bipolar (BJT) · SOT-363
MMBT3946DW from YFW, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of one of the two transistors (Q1 NPN or Q2 PNP); the datasheet rates emitter-base voltage at 6 V and collector current at 200 mA maximum. |
| 2 | Base | passive | Base terminal of the same transistor as pin 1; emitter-base cutoff current is 50 nA max at VEB = 6 V and emitter-base breakdown is 6 V min at IE = 10 µA. |
| 3 | Collector | passive | Collector terminal of the same transistor as pins 1 and 2; collector-emitter breakdown is 40 V min at 1 mA, and collector current is 200 mA maximum. |
| 4 | Emitter | passive | Emitter terminal of the other transistor (Q1 NPN or Q2 PNP, whichever is not on pins 1-3); the datasheet rates emitter-base voltage at 6 V and collector current at 200 mA maximum. |
| 5 | Base | passive | Base terminal of the same transistor as pin 4; emitter-base cutoff current is 50 nA max at VEB = 6 V and emitter-base breakdown is 6 V min at IE = 10 µA. |
| 6 | Collector | passive | Collector terminal of the same transistor as pins 4 and 5; collector-emitter breakdown is 40 V min at 1 mA, and collector current is 200 mA maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Q1 (NPN) DC current gain, IC=0.1 mA | hFE | 40 | | | | at VCE = 1 V, IC = 0.1 mA | 2 |
| Q1 (NPN) DC current gain, IC=1 mA | hFE | 70 | | | | at VCE = 1 V, IC = 1 mA | 2 |
| Q1 (NPN) DC current gain, IC=10 mA | hFE | 100 | | 300 | | at VCE = 1 V, IC = 10 mA | 2 |
| Q1 (NPN) DC current gain, IC=50 mA | hFE | 60 | | | | at VCE = 1 V, IC = 50 mA | 2 |
| Q1 (NPN) DC current gain, IC=100 mA | hFE | 30 | | | | at VCE = 1 V, IC = 100 mA | 2 |
| Q1 (NPN) collector-base cutoff current | ICBO | | | 50 | nA | at VCB = 30 V | 2 |
| Q1 (NPN) emitter-base cutoff current | IEBO | | | 50 | nA | at VEB = 6 V | 2 |
| Q1 (NPN) collector-base breakdown voltage | V(BR)CBO | 60 | | | V | at IC = 10 µA | 2 |
| Q1 (NPN) collector-emitter breakdown voltage | V(BR)CEO | 40 | | | V | at IC = 1 mA | 2 |
| Q1 (NPN) emitter-base breakdown voltage | V(BR)EBO | 6 | | | V | at IE = 10 µA | 2 |
| Q1 (NPN) collector-emitter saturation voltage, IC=10 mA | VCE(sat) | | | 0.2 | V | at IC = 10 mA, IB = 1 mA | 2 |
| Q1 (NPN) collector-emitter saturation voltage, IC=50 mA | VCE(sat) | | | 0.3 | V | at IC = 50 mA, IB = 5 mA | 2 |
| Q1 (NPN) base-emitter saturation voltage, IC=10 mA | VBE(sat) | 0.65 | | 0.85 | V | at IC = 10 mA, IB = 1 mA | 2 |
| Q1 (NPN) base-emitter saturation voltage, IC=50 mA | VBE(sat) | | | 0.95 | V | at IC = 50 mA, IB = 5 mA | 2 |
| Q1 (NPN) current gain bandwidth product | fT | 300 | | | MHz | at VCE = 20 V, IC = 10 mA, f = 100 MHz | 2 |
| Q1 (NPN) collector output capacitance | Cob | | | 4 | pF | at VCB = 5 V, IE = 0, f = 1 MHz | 2 |
| Q1 (NPN) delay time | td | | | 35 | ns | at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA | 2 |
| Q1 (NPN) rise time | tr | | | 35 | ns | at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA | 2 |
| Q1 (NPN) storage time | ts | | | 200 | ns | at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA | 2 |
| Q1 (NPN) fall time | tf | | | 50 | ns | at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA | 2 |
| Q2 (PNP) DC current gain, IC=0.1 mA | hFE | 60 | | | | at -VCE = 1 V, -IC = 0.1 mA | 3 |
| Q2 (PNP) DC current gain, IC=1 mA | hFE | 80 | | | | at -VCE = 1 V, -IC = 1 mA | 3 |
| Q2 (PNP) DC current gain, IC=10 mA | hFE | 100 | | 300 | | at -VCE = 1 V, -IC = 10 mA | 3 |
| Q2 (PNP) DC current gain, IC=50 mA | hFE | 60 | | | | at -VCE = 1 V, -IC = 50 mA | 3 |
| Q2 (PNP) DC current gain, IC=100 mA | hFE | 30 | | | | at -VCE = 1 V, -IC = 100 mA | 3 |
| Q2 (PNP) collector-base cutoff current | -ICBO | | | 50 | nA | at -VCB = 30 V | 3 |
| Q2 (PNP) emitter-base cutoff current | -IEBO | | | 50 | nA | at -VEB = 6 V | 3 |
| Q2 (PNP) collector-base breakdown voltage | -V(BR)CBO | 40 | | | V | at -IC = 10 µA | 3 |
| Q2 (PNP) collector-emitter breakdown voltage | -V(BR)CEO | 40 | | | V | at -IC = 1 mA | 3 |
| Q2 (PNP) emitter-base breakdown voltage | -V(BR)EBO | 6 | | | V | at -IE = 10 µA | 3 |
| Q2 (PNP) collector-emitter saturation voltage, IC=10 mA | -VCE(sat) | | | 0.25 | V | at -IC = 10 mA, -IB = 1 mA | 3 |
| Q2 (PNP) collector-emitter saturation voltage, IC=50 mA | -VCE(sat) | | | 0.4 | V | at -IC = 50 mA, -IB = 5 mA | 3 |
| Q2 (PNP) base-emitter saturation voltage, IC=10 mA | -VBE(sat) | 0.65 | | 0.85 | V | at -IC = 10 mA, -IB = 1 mA | 3 |
| Q2 (PNP) base-emitter saturation voltage, IC=50 mA | -VBE(sat) | | | 0.95 | V | at -IC = 50 mA, -IB = 5 mA | 3 |
| Q2 (PNP) current gain bandwidth product | fT | 250 | | | MHz | at -VCE = 20 V, -IC = 10 mA, f = 100 MHz | 3 |
| Q2 (PNP) output capacitance | Cobo | | | 4.5 | pF | at -VCB = 5 V, IE = 0, f = 1 MHz | 3 |
| Q2 (PNP) delay time | td | | | 35 | ns | at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA | 3 |
| Q2 (PNP) rise time | tr | | | 35 | ns | at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA | 3 |
| Q2 (PNP) storage time | ts | | | 225 | ns | at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA | 3 |
| Q2 (PNP) fall time | tf | | | 75 | ns | at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA | 3 |
| Q1 (NPN) collector-base voltage | VCBO | | | 60 | V | Ta = 25℃ (Q1 maximum ratings) | 1 |
| Q1 (NPN) collector-emitter voltage | VCEO | | | 40 | V | Ta = 25℃ (Q1 maximum ratings) | 1 |
| Q1 (NPN) emitter-base voltage | VEBO | | | 6 | V | Ta = 25℃ (Q1 maximum ratings) | 1 |
| Q1 (NPN) collector current | IC | | | 200 | mA | Ta = 25℃ (Q1 maximum ratings) | 1 |
| Q2 (PNP) collector-base voltage | -VCBO | | | 40 | V | Ta = 25℃ (Q2 maximum ratings) | 1 |
| Q2 (PNP) collector-emitter voltage | -VCEO | | | 40 | V | Ta = 25℃ (Q2 maximum ratings) | 1 |
| Q2 (PNP) emitter-base voltage | -VEBO | | | 6 | V | Ta = 25℃ (Q2 maximum ratings) | 1 |
| Q2 (PNP) collector current | -IC | | | 200 | mA | Ta = 25℃ (Q2 maximum ratings) | 1 |
| Total power dissipation (Q1+Q2) | Ptot | | | 200 | mW | Ta = 25℃ (Q1Q2 maximum ratings) | 1 |
| Junction temperature | Tj | | | 150 | °C | Q1Q2 maximum ratings | 1 |
| Storage temperature range | Tstg | -55 | | 150 | °C | Q1Q2 maximum ratings | 1 |
## CAD (KiCad official)
- Symbol: `MMBT3946DW`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `mmbt3946dw-etched.step` / `mmbt3946dw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt3946dw.step` / `mmbt3946dw.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [YFW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589784677726269440) (6 pp, sha256 `e16f308502815ee8`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmbt3946dw-datasheet.pdf)