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MMBT3906X

Public Made by Adom

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Shenzhen JingYang Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT3906X

Shenzhen JingYang · Bipolar (BJT) · SOT-23

MMBT3906X from Shenzhen JingYang, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the PNP transistor; VEBO (emitter-base voltage, open collector) is limited to -5 V.
2 EMITTER passive Emitter of the PNP transistor; collector current IC is limited to -200 mA DC.
3 COLLECTOR passive Collector of the PNP transistor; VCBO and VCEO are both -40 V maximum, and total power dissipation is 200 mW at Tamb≤25°C.

Key specifications

Parameter Value
Manufacturer Shenzhen JingYang
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector cut-off current ICBO -0.1 uA IE = 0; VCB = -40 V 2
emitter cut-off current IEBO -0.1 uA IC = 0; VEB = -5 V 2
DC current gain hFE 100 VCE = -1V; IC = -10mA 2
DC current gain hFE 60 VCE = -1V; IC = -50mA 2
DC current gain hFE 30 VCE = -1V; IC = -100mA 2
DC current gain hFE 300 VCE = -1V; IC = -10mA 2
collector-emitter saturation voltage VCEsat -200 mV IC = -10mA; IB = -1mA 2
collector-emitter saturation voltage VCEsat -400 mV IC = -50mA; IB = -5mA 2
base-emitter saturation voltage VBEsat -850 mV IC = -10mA; IB = -1mA 2
base-emitter saturation voltage VBEsat -950 mV IC = -50mA; IB = -5mA 2
transition frequency fT 300 MHz IC = -10mA; VCE = -20 V; f = 100MHz 2
delay time td 35 ns VCC = -3V; IC = -10mA; IB1= IB2= -1mA 2
rise time tr 35 ns VCC = -3V; IC = -10mA; IB1= IB2= -1mA 2
storage time ts 225 ns VCC = -3V; IC = -10mA; IB1= IB2= -1mA 2
fall time tr 75 ns VCC = -3V; IC = -10mA; IB1= IB2= -1mA 2
collector-base voltage VCBO -40 V open emitter 1
collector-emitter voltage VCEO -40 V open base 1
emitter-base voltage VEBO -5 V open collector 1
collector current (DC) IC -200 mA 1
total power dissipation Ptot 200 mW Tamb≤25°C; transistor mounted on an FR4 printed-circuit board 1
storage temperature Tstg -55 150 °C 1
junction temperature Tj 150 °C 1

CAD (KiCad official)

  • Symbol: MMBT3906X
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt3906x-etched.step / mmbt3906x-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt3906x.step / mmbt3906x.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen JingYang datasheet (4 pp, sha256 c155599deb84dd6a, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF