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MMBT3906_R1_00101

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PANJIT International Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT3906_R1_00101

PANJIT International · Bipolar (BJT) · SOT-23

MMBT3906_R1_00101 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the PNP transistor; the datasheet gives the emitter-base limit VEBO of -5 V and emitter-base breakdown of -5 V minimum, with no separate base-pin rating stated.
2 Emitter passive Emitter terminal of the PNP transistor, rated for continuous collector current of -200 mA with emitter-base voltage limited to VEBO -5 V.
3 Collector passive Collector terminal of the PNP transistor, rated for VCEO -40 V and VCBO -40 V with continuous collector current of -200 mA.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector - Emitter Voltage VCEO -40 V 1
Collector - Base Voltage VCBO -40 V 1
Emitter - Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -200 mA 1
Max Power Dissipation PTOT 330 mW Note 1: transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. 1
Operating Junction Temperature and Storage Temperature Range TJ,TSTG -55 150 °C 1
Thermal Resistance, Junction to Ambient RθJA 375 °C/W 1
Collector - Emitter Breakdown Voltage V(BR)CEO -40 V IC=-1mA, IB=0 2
Collector - Base Breakdown Voltage V(BR)CBO -40 V IC=-10uA, IE=0 2
Emitter - Base Breakdown Voltage V(BR)EBO -5 V IE=-10uA, IC=0 2
Base Cutoff Current IBL -50 nA VCE=-30V, VEB=-3V 2
Collector Cutoff Current ICEX -50 nA VCE=-30V, VEB=-3V 2
DC Current Gain hFE 60 IC=-0.1mA, VCE=-1V 2
DC Current Gain hFE 80 IC=-1mA, VCE=-1V 2
DC Current Gain hFE 100 IC=-10mA, VCE=-1V 2
DC Current Gain hFE 30 IC=-100mA, VCE=-1V 2
DC Current Gain hFE 300 2
Collector - Emitter Saturation Voltage VCE(SAT) -0.25 V IC=-10mA, IB=-1mA 2
Collector - Emitter Saturation Voltage VCE(SAT) -0.4 V IC=-50mA, IB=-5mA 2
Base - Emitter Saturation Voltage VBE(SAT) -0.65 -0.85 V IC=-10mA, IB=-1mA 2
Base - Emitter Saturation Voltage VBE(SAT) -0.95 V IC=-50mA, IB=-5mA 2
Collector - Base Capacitance CCBO 4.5 pF VCB=-5V, IE=0, f=1MHz 2
Emitter - Base Capacitance CEBO 10 pF VEB=-0.5V, IC=0, f=1MHz 2
Delay Time td 35 ns VCC=-3V, VBE=-0.5V, IC=-10mA, IB=-1mA 2
Rise Time tr 35 ns VCC=-3V, VBE=-0.5V, IC=-10mA, IB=-1mA 2
Storage Time ts 225 ns VCC=-3V, IC=-10mA, IB1=IB2=-1mA 2
Fall Time tf 75 ns VCC=-3V, IC=-10mA, IB1=IB2=-1mA 2
Current Gain-Bandwidth Product fT 250 MHz IC=-10mA, VCE=-20V, f=100MHz 2

CAD (KiCad official)

  • Symbol: MMBT3906_R1_00101
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt3906-r1-00101-etched.step / mmbt3906-r1-00101-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt3906-r1-00101.step / mmbt3906-r1-00101.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (5 pp, sha256 84921e36bb26e2f4, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF