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page.json mmbt3906-2a: specified limits as data (metadata.characteristics, 24 rows from the datasheet) · Ray 16d ago
README.md mmbt3906-2a: specified limits as data (metadata.characteristics, 24 rows from the datasheet) · Ray 16d ago

MMBT3906 2A

Changjing · Bipolar (BJT) · SOT-23

MMBT3906 2A from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet limits the emitter-base voltage (VEBO) to -5 V.
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V minimum at IE = -10 μA.
3 COLLECTOR passive Collector terminal of the PNP transistor, rated for -0.2 A continuous collector current with a collector-emitter voltage limit (VCEO) of -40 V.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -40 V IC=-10μA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO -40 V IC= -1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO -5 V IE= -10μA, IC=0 1
Collector cut-off current ICBO -100 nA VCB= -40 V, IE=0 1
Collector cut-off current ICEX -50 nA VCE=-30V, VBE(off)=-3V 1
Emitter cut-off current IEBO -100 nA VEB= -5V, IC=0 1
DC current gain hFE1 100 300 VCE=-1V, IC= -10mA 1
DC current gain hFE2 60 VCE= -1V, IC=-50mA 1
DC current gain hFE3 30 VCE= -1V, IC=-100mA 1
Collector-emitter saturation voltage VCE(sat)1 -0.3 V IC=-50mA, IB=-5mA 1
Base-emitter saturation voltage VBE(sat) -0.95 V IC= -50mA, IB=-5mA 1
Transition frequency fT 300 MHz VCE=-20V,IC=-10mA,f=100MHz 1
Delay time td 35 nS 1
Rise time tr 35 nS VCC=-3V,VBE=-0.5V, IC=-10mA, IB1=IB2=-1mA 1
Storage time ts 225 nS 1
Fall time tf 75 nS VCC=-3V,IC=-10mA, IB1=IB2=-1mA 1
Collector-base voltage VCBO -40 V TA=25℃ 1
Collector-emitter voltage VCEO -40 V TA=25℃ 1
Emitter-base voltage VEBO -5 V TA=25℃ 1
Collector current, continuous IC -0.2 A TA=25℃ 1
Collector dissipation PC 0.2 W TA=25℃ 1
Thermal resistance junction to ambient RθJA 625 ℃/W 1
Junction temperature TJ 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: MMBT3906 2A
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt3906-2a-etched.step / mmbt3906-2a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt3906-2a.step / mmbt3906-2a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (2 pp, sha256 427549748caaec25, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF