component

MMBT3904W

Public Made by Adom

by adom

GOODWORK Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Ray mmbt3904w: specified limits as data (metadata.characteristics, 27 rows from the datasheet) 8377030 24d ago

MMBT3904W

GOODWORK · Bipolar (BJT) · SOT-323

MMBT3904W from GOODWORK, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor; the device is rated for VCBO 60 V, VCEO 40 V, VEBO 6 V and IC 200 mA.
2 EMITTER passive Emitter terminal of the NPN transistor; the device is rated for VCBO 60 V, VCEO 40 V, VEBO 6 V and IC 200 mA.
3 COLLECTOR passive Collector terminal of the NPN transistor; the device is rated for VCBO 60 V, VCEO 40 V, VEBO 6 V and IC 200 mA and total power dissipation Ptot 200 mW.

Key specifications

Parameter Value
Manufacturer GOODWORK
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (hFE) at VCE = 1 V, IC = 0.1 mA hFE 40 VCE = 1 V, IC = 0.1 mA 2
DC Current Gain (hFE) at VCE = 1 V, IC = 1 mA hFE 70 VCE = 1 V, IC = 1 mA 2
DC Current Gain (hFE) at VCE = 1 V, IC = 10 mA hFE 100 300 VCE = 1 V, IC = 10 mA 2
DC Current Gain (hFE) at VCE = 1 V, IC = 50 mA hFE 60 VCE = 1 V, IC = 50 mA 2
DC Current Gain (hFE) at VCE = 1 V, IC = 100 mA hFE 30 VCE = 1 V, IC = 100 mA 2
Collector Emitter Cutoff Current ICES 50 nA VCE = 30 V 2
Emitter Base Cutoff Current IEBO 50 nA VEB = 3 V 2
Collector Base Breakdown Voltage V(BR)CBO 60 V IC = 10 µA 2
Collector Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1 mA 2
Emitter Base Breakdown Voltage V(BR)EBO 6 V IE = 10 µA 2
Collector Emitter Saturation Voltage VCE(sat) 0.2 V IC = 10 mA, IB = 1 mA 2
Collector Emitter Saturation Voltage VCE(sat) 0.3 V IC = 50 mA, IB = 5 mA 2
Base Emitter Saturation Voltage VBE(sat) 0.65 0.85 V IC = 10 mA, IB = 1 mA 2
Base Emitter Saturation Voltage VBE(sat) 0.95 V IC = 50 mA, IB = 5 mA 2
Transition Frequency fT 300 MHz VCE = 20 V, -IE = 10 mA, f = 100 MHz 2
Collector Output Capacitance Cob 4 pF VCB = 10 V, f = 100 KHz 2
Delay Time td 35 ns VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA 2
Rise Time tr 35 ns VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA 2
Storage Time tstg 200 ns VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA 2
Fall Time tf 50 ns VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA 2
Collector Base Voltage VCBO 60 V 1
Collector Emitter Voltage VCEO 40 V 1
Emitter Base Voltage VEBO 6 V 1
Collector Current IC 200 mA 1
Total Power Dissipation Ptot 200 mW 1
Junction Temperature Tj 150 °C 1
Storage Temperature Range Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: MMBT3904W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: mmbt3904w-etched.step / mmbt3904w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt3904w.step / mmbt3904w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOODWORK datasheet (4 pp, sha256 6541ca1022b0f0cf, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF