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MMBT3904T-MS

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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MMBT3904T-MS

MSKSEMI · Bipolar (BJT) · SOT-523

MMBT3904T-MS from MSKSEMI, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, only device maximum ratings such as VEBO 6 V and IC 200 mA.
2 EMITTER passive Emitter terminal of the NPN transistor; the datasheet gives no pin-specific limit, only device maximum ratings such as VEBO 6 V and IC 200 mA.
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet gives no pin-specific limit, only device maximum ratings such as VCBO 60 V, VCEO 40 V and IC 200 mA.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-523
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 60 V IC=10µA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 40 V IC=1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10µA, IC=0 2
Collector cut-off current ICEX 50 nA VCE=30V, VEB(off)=3V 2
Emitter cut-off current IEBO 100 nA VEB=5V, IC=0 2
DC current gain hFE(1) 40 VCE=1V, IC=0.1mA 2
DC current gain hFE(2) 70 VCE=1V, IC=1mA 2
DC current gain hFE(3) 100 300 VCE=1V, IC=10mA 2
DC current gain hFE(4) 60 VCE=1V, IC=50mA 2
Collector-emitter saturation voltage VCE(sat) 0.2 V IC=10mA, IB=1mA 2
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=50mA, IB=5mA 2
Base-emitter saturation voltage VBE(sat) 0.65 0.85 V IC=10mA, IB=1mA 2
Base-emitter saturation voltage VBE(sat) 0.95 V IC=50mA, IB=5mA 2
Transition frequency fT 300 MHz VCE=20V, IC=10mA, f=100MHz 2
Collector output capacitance Cob 4 pF VCB=5V, IE=0, f=1MHz 2
Base input capacitance Cib 8 pF VEB=0.5V, IC=0, f=1MHz 2
Delay time td 35 ns VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA 2
Rise time tr 35 ns VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA 2
Storage time ts 200 ns VCC=3V, IC=10mA, IB1=IB2=1mA 2
Fall time tf 50 ns VCC=3V, IC=10mA, IB1=IB2=1mA 2
Collector-Base Voltage VCBO 60 V 2
Collector-Emitter Voltage VCEO 40 V 2
Emitter-Base Voltage VEBO 6 V 2
Collector Current IC 200 mA 2
Collector Power Dissipation PC 150 mW 2
Operation Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ 2
Thermal Resistance From Junction To Ambient RΘJA 833 ℃/W 2

CAD (KiCad official)

  • Symbol: MMBT3904T-MS
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: mmbt3904t-ms-etched.step / mmbt3904t-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt3904t-ms.step / mmbt3904t-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (4 pp, sha256 b66ae5c86239dbe7, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF