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MMBT3904-MS

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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MMBT3904-MS

MSKSEMI · Bipolar (BJT) · SOT-23

MMBT3904-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet gives VBE(sat) of 0.95 V at IC=50 mA and IB=5 mA.
2 EMITTER passive Emitter terminal of the NPN transistor; the absolute maximum emitter-base voltage VEBO is 6 V.
3 COLLECTOR passive Collector terminal of the NPN transistor; absolute maximums are VCEO 40 V, VCBO 60 V and IC 200 mA.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 60 V IC=10µA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 40 V IC=1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10µA, IC=0 2
Collector cut-off current ICEX 50 nA VCE=30V, VEB(off)=3V 2
Collector cut-off current ICBO 100 nA VCB= 60V, IE=0 2
Emitter cut-off current IEBO 100 nA VEB=5V, IC=0 2
DC current gain hFE(1) hFE(1) 100 300 VCE=1V, IC=10mA 2
DC current gain hFE(2) hFE(2) 60 VCE=1V, IC=50mA 2
DC current gain hFE(3) hFE(3) 30 VCE=1V, IC=100mA 2
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=50mA, IB=5mA 2
Base-emitter saturation voltage VBE(sat) 0.95 V IC=50mA, IB=5mA 2
Transition frequency fT 300 MHz VCE=20V,IC=10mA, f=100MHz 2
Delay time td 35 ns VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA 2
Rise time tr 35 ns VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA 2
Storage time ts 200 ns VCC=3V, IC=10mA, IB1= IB2=1mA 2
Fall time tf 50 ns VCC=3V, IC=10mA, IB1= IB2=1mA 2
Collector-base voltage VCBO 60 V 2
Collector-emitter voltage VCEO 40 V 2
Emitter-base voltage VEBO 6 V 2
Collector current IC 200 mA 2
Collector power dissipation PC 200 mW Ta=25℃ 2
Thermal resistance from junction to ambient R θJA 625 ℃/W 2
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ 2

CAD (KiCad official)

  • Symbol: MMBT3904-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt3904-ms-etched.step / mmbt3904-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt3904-ms.step / mmbt3904-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 f96a1422e8c0d097, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF