component

MMBT3904-13-F

Public Made by Adom

by adom

Diodes Incorporated Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmmbt3904-13-ffactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 1mo ago
viewers mmbt3904-13-f: viewers · Ray 1mo ago
mmbt3904-13-f-etched.glb mmbt3904-13-f: factory component page (tier=lcsc) · Ray 1mo ago
mmbt3904-13-f-etched.step mmbt3904-13-f: factory component page (tier=lcsc) · Ray 1mo ago
mmbt3904-13-f-hero.glb mmbt3904-13-f: hero GLB from the etched model (keeps the MPN mark) · Ray 1mo ago
mmbt3904-13-f-hero.overlay.json Publish 0.1.0 · Ray 1mo ago
mmbt3904-13-f.glb Publish 0.1.0 · Ray 1mo ago
mmbt3904-13-f.kicad_mod Publish 0.1.0 · Ray 1mo ago
mmbt3904-13-f.kicad_sym Publish 0.1.0 · Ray 1mo ago
mmbt3904-13-f.lbr Publish 0.1.0 · Ray 1mo ago
mmbt3904-13-f.step Publish 0.1.0 · Ray 1mo ago
package.json Publish 0.1.0 · Ray 1mo ago
page.json mmbt3904-13-f: specified limits as data (metadata.characteristics, 40 rows from the datasheet) · Ray 23d ago
README.md mmbt3904-13-f: specified limits as data (metadata.characteristics, 40 rows from the datasheet) · Ray 23d ago

MMBT3904-13-F

Diodes Incorporated · Bipolar (BJT) · SOT-23

MMBT3904-13-F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor, shown at the bottom left of the top-view pin-out; VEBO max is 6 V and the continuous collector current rating is 200 mA.
2 E passive Emitter of the NPN transistor, shown at the bottom right of the top-view pin-out; the emitter-base voltage limit is 6 V.
3 C passive Collector of the NPN transistor, the single pin on the top side of the top-view pin-out; VCEO max is 40 V, VCBO max is 60 V and IC max is 200 mA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 10mA, IB = 0 4
Collector-Base Breakdown Voltage BVCBO 60 V IC = 10μA, IE = 0 4
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 10μA, IC = 0 4
Collector Cut-Off Current ICEX 50 nA VCE = 30V, VEB(off) = 3.0V 4
Base Cut-Off Current IBL 50 nA VCE = 30V, VEB(off) = 3.0V 4
Emitter Base Cut-Off Current IEBO 50 nA VEB = 6V 4
Collector-Base Cut-Off Current ICBO 50 nA VCB = 48V 4
DC Current Gain hFE 40 IC = 100µA, VCE = 1.0V 4
DC Current Gain hFE 70 IC = 1.0mA, VCE = 1.0V 4
DC Current Gain hFE 100 300 IC = 10mA, VCE = 1.0V 4
DC Current Gain hFE 60 IC = 50mA, VCE = 1.0V 4
DC Current Gain hFE 30 IC = 100mA, VCE = 1.0V 4
Collector-Emitter Saturation Voltage VCE(sat) 0.2 V IC = 10mA, IB = 1.0mA 4
Collector-Emitter Saturation Voltage VCE(sat) 0.3 V IC = 50mA, IB = 5.0mA 4
Base-Emitter Saturation Voltage VBE(sat) 0.65 0.85 V IC = 10mA, IB = 1.0mA 4
Base-Emitter Saturation Voltage VBE(sat) 0.95 V IC = 50mA, IB = 5.0mA 4
Output Capacitance COBO 4 pF VCB = 5.0V, f = 1.0MHz, IE = 0 4
Input Capacitance CIBO 8 pF VEB = 0.5V, f = 1.0MHz, IC = 0 4
Input Impedance hIE 1 10 kΩ VCE = 10V, IC = 1.0mA, f = 1.0kHz 4
Voltage Feedback Ratio hRE 0.5 8 x 10-4 4
Small Signal Current Gain hFE 100 400 4
Output Admittance hOE 1 40 µS 4
Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 10mA, f = 100MHz 4
Noise Figure NF 5 dB VCE = 5.0V, IC = 100μA, RS = 1.0kΩ f = 1.0kHz 4
Delay Time td 35 ns VCC = 3.0V, IC = 10mA, VBE(OFF) = -0.5V, IB1 = 1.0mA 4
Rise Time tr 35 ns VCC = 3.0V, IC = 10mA, VBE(OFF) = -0.5V, IB1 = 1.0mA 4
Storage Time ts 200 ns VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 4
Fall Time tf 50 ns VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 4
Collector-Base Voltage VCBO 60 V 2
Collector-Emitter Voltage VCEO 40 V 2
Emitter-Base Voltage VEBO 6 V 2
Collector Current IC 200 mA 2
Operating and Storage Temperature Range TJ,TSTG -55 150 °C 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C 2
Power Dissipation PD 350 mW Note 5 (minimum recommended pad layout, 1oz copper, single-sided FR4) 2
Power Dissipation PD 310 mW Note 6 (15 mm x 15 mm 1oz copper) 2
Thermal Resistance, Junction to Ambient RθJA 357 °C/W Note 5 (minimum recommended pad layout, 1oz copper, single-sided FR4) 2
Thermal Resistance, Junction to Ambient RθJA 403 °C/W Note 6 (15 mm x 15 mm 1oz copper) 2
Thermal Resistance, Junction to Leads RθJL 350 °C/W Note 7 (junction to solder-point, end of leads) 2

CAD (KiCad official)

  • Symbol: MMBT3904-13-F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt3904-13-f-etched.step / mmbt3904-13-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt3904-13-f.step / mmbt3904-13-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 4dc9117615e6d219, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF