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Contents

README

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MMBT2907AT

YFW · Bipolar (BJT) · SOT-523

MMBT2907AT from YFW, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the PNP transistor; the datasheet gives emitter-base breakdown voltage VEBO of -5 V and emitter cut-off current IEBO of -100 nA at VEB = -5 V.
2 Emitter passive Emitter terminal of the PNP transistor; the datasheet limits emitter-base voltage to -5 V (VEBO) and gives emitter input capacitance Cib of 30 pF at VEB = -2 V.
3 Collector passive Collector terminal of the PNP transistor; the datasheet rates collector-base voltage VCBO at -60 V, collector-emitter voltage VCEO at -60 V and continuous collector current IC at -600 mA.

Key specifications

Parameter Value
Manufacturer YFW
Package SOT-523
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector - Base Voltage VCBO -60 V 1
Collector - Emitter Voltage VCEO -60 V 1
Emitter - Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -600 mA 1
Collector Power Dissipation PC 150 mW 1
Thermal Resistance, Junction to Ambient RθJA 833 °C/W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Collector-base breakdown voltage VCBO -60 V Ic= -100 μA, IE= 0 1
Collector-emitter breakdown voltage VCEO -60 V Ic= -10 mA, IB= 0 1
Emitter-base breakdown voltage VEBO -5 V IE= -100μA, IC= 0 1
Collector-base cut-off current ICBO -100 nA VCB= -50 V, IE= 0 1
Emitter cut-off current IEBO -100 nA VEB= -5V, IC=0 1
Collector-emitter saturation voltage VCE(sat) -0.4 V IC=-150 mA, IB=-15mA 1
Collector-emitter saturation voltage VCE(sat) -1.6 V IC= -500 mA, IB= -50mA 1
Base-emitter saturation voltage VBE(sat) -1.3 V IC=-150 mA, IB=-15mA 1
Base-emitter saturation voltage VBE(sat) -2.6 V IC= -500 mA, IB= -50mA 1
DC current gain hFE(1) 75 VCE= -10V, IC=-0.1mA 1
DC current gain hFE(2) 100 VCE= -10V, IC= -1mA 1
DC current gain hFE(4) 100 300 VCE= -10V, IC= -150mA 1
DC current gain hFE(5) 50 VCE= -10V, IC= -500mA 1
Delay time td 10 nS 1
Rise time tr 40 nS 1
Storage time ts 225 nS 1
Fall time tf 30 nS 1
Emitter input capacitance Cib 30 pF VEB= -2V, IC= 0, f=1MHz 1
Collector output capacitance Cob 8 pF VCB= -10V, IE= 0, f=1MHz 1
Transition frequency fT 200 MHz VCE= -20V, IC= -50mA, f=100MHz 1

CAD (KiCad official)

  • Symbol: MMBT2907AT
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: mmbt2907at-etched.step / mmbt2907at-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2907at.step / mmbt2907at.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YFW datasheet (2 pp, sha256 aa9ef648f130a338, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF