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MMBT2907ALT1HTSA1

Public Made by Adom

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Infineon Technologies Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT2907ALT1HTSA1

Infineon Technologies · Bipolar (BJT) · SOT-23

MMBT2907ALT1HTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal; the datasheet's maximum ratings give a base current IB of 100 and a peak base current IBM of 200 (unit not printed in the text, presumably mA).
2 E passive Emitter terminal; the emitter-base voltage VEBO is rated at a maximum of 5 V.
3 C passive Collector terminal; the collector-emitter voltage VCEO is rated at 60 V and the collector current IC at 600 mA.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCEO 60 V 1
Collector-base voltage VCBO 60 V 1
Emitter-base voltage VEBO 5 V 1
Collector current IC 600 mA 1
Base current IB 100 mA 1
Peak base current IBM 200 mA 1
Total power dissipation Ptot 330 mW TS ≤ 77 °C 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -65 150 °C 1
Junction - soldering point thermal resistance RthJS 220 K/W Junction - soldering point 1
Collector-emitter breakdown voltage V(BR)CEO 60 V IC = 10 mA, IB = 0 2
Collector-base breakdown voltage V(BR)CBO 60 V IC = 10 µA, IE = 0 2
Emitter-base breakdown voltage V(BR)EBO 5 V IE = 10 µA, IC = 0 2
Collector-base cutoff current ICBO 0.01 µA VCB = 50 V, IE = 0 2
Collector-base cutoff current ICBO 10 µA VCB = 50 V, IE = 0, TA = 150 °C 2
Emitter-base cutoff current IEBO 10 nA VEB = 5 V, IC = 0 2
DC current gain hFE 75 IC = 100 µA, VCE = 10 V 2
DC current gain hFE 100 IC = 1 mA, VCE = 10 V 2
DC current gain hFE 100 300 IC = 150 mA, VCE = 10 V 2
DC current gain hFE 50 IC = 500 mA, VCE = 10 V 2
Collector-emitter saturation voltage VCEsat 0.4 V IC = 150 mA, IB = 15 mA 2
Collector-emitter saturation voltage VCEsat 1.6 V IC = 500 mA, IB = 50 mA 2
Base-emitter saturation voltage VBEsat 1.3 V IC = 150 mA, IB = 15 mA 2
Base-emitter saturation voltage VBEsat 2.6 V IC = 500 mA, IB = 50 mA 2
Transition frequency fT 200 MHz IC = 20 mA, VCE = 20 V, f = 100 MHz 3
Collector-base capacitance Ccb 8 pF VCB = 10 V, f = 1 MHz 3
Emitter-base capacitance Ceb 30 pF VEB = 0.5 V, f = 1 MHz 3
Delay time td 10 ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V 3
Rise time tr 40 ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V 3
Storage time tstg 80 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA 3
Fall time tf 30 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA 3

CAD (KiCad official)

  • Symbol: MMBT2907ALT1HTSA1
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt2907alt1htsa1-etched.step / mmbt2907alt1htsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2907alt1htsa1.step / mmbt2907alt1htsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 9146cac5aea39d83, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF