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MMBT2907AG-AE3-R

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UTC Unisonic Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT2907AG-AE3-R

UTC Unisonic Tech · Bipolar (BJT) · SOT-23

MMBT2907AG-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter of the PNP transistor; the datasheet gives no separate pin-level limit, so the device ratings apply (VEBO -5 V, continuous IC -600 mA).
2 B passive Base of the PNP transistor, which drives collector current; the datasheet gives no separate pin-level limit, so the device ratings apply (VEBO -5 V, continuous IC -600 mA).
3 C passive Collector of the PNP transistor; device absolute maximum ratings are VCEO -60 V, VCBO -60 V and continuous IC -600 mA.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -60 V 2
Collector-Base Voltage VCBO -60 V 2
Emitter-Base Voltage VEBO -5 V 2
Collector Current Continuous IC -600 mA 2
Power Dissipation SOT-23 PD 350 mW 2
Junction Temperature TJ 150 °C 2
Operating Temperature TOPR -40 150 °C 2
Storage Temperature TSTG -55 150 °C 2
Junction to Case SOT-23 (as printed) θJA 357 C/W 2
Collector-Emitter Breakdown Voltage (Note) BVCEO -60 V IC=-10mA, IB=0 2
Collector-Base Breakdown Voltage BVCBO -60 V IC=-10μA, IE=0 2
Emitter-Base Breakdown Voltage BVEBO -5 V IE=-10μA, IC=0 2
Base Cutoff Current IB -50 nA VCB=-30V, VEB=-0.5V 2
Collector Cutoff Current ICEX -50 nA VCE=-30V, VBE=-0.5V 2
Collector Cutoff Current ICBO -0.02 μA VCB=-50V, IE=0 2
Collector Cutoff Current ICBO -20 μA VCB=-50V, IE=0, TA=150°C 2
DC Current Gain hFE 75 IC=-0.1mA, VCE=-10V 2
DC Current Gain hFE 100 IC=-1.0 mA, VCE=-10V 2
DC Current Gain hFE 100 300 IC=-150 mA, VCE=-10V (Note) 2
DC Current Gain hFE 50 IC=-500 mA, VCE=-10V (Note) 2
Collector-Emitter Saturation Voltage (Note) VCE(SAT) -0.4 V IC=-150 mA, IB=-15mA 2
Collector-Emitter Saturation Voltage (Note) VCE(SAT) -1.6 V IC=-500 mA, IB=-50mA 2
Base-Emitter Saturation Voltage VBE(SAT) -1.3 V IC=-150 mA, IB=-15mA (Note) 2
Base-Emitter Saturation Voltage VBE(SAT) -2.6 V IC=-500 mA, IB=-50mA 2
Current Gain, Bandwidth Product fT 200 MHz IC=-50mA, VCE=-20V, f=100MHz 2
Output Capacitance Cob 8 pF VCB=-10V, IE=0, f=100kHz 2
Input Capacitance Cib 30 pF VEB=-2V, IC=0, f=100kHz 2
Turn-on Time tON 45 ns VCC=30V, IC=-150mA, IB1=-15mA 2
Delay Time tDLY 10 ns 2
Rise Time tR 40 ns 2
Turn-off Time tOFF 100 ns VCC=6V, IC=-150mA, IB1=IB2=-15mA 2
Storage Time tS 80 ns 2
Fall Time tF 30 ns 2

CAD (KiCad official)

  • Symbol: MMBT2907AG-AE3-R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt2907ag-ae3-r-etched.step / mmbt2907ag-ae3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2907ag-ae3-r.step / mmbt2907ag-ae3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (6 pp, sha256 642eea1866eed87a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF