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MMBT2907A_R1_00001

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PANJIT International Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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MMBT2907A_R1_00001

PANJIT International · Bipolar (BJT) · SOT-23

MMBT2907A_R1_00001 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor (Top View pin 1); the datasheet gives the device-level absolute maximum emitter-base voltage VEBO as -5.0 V.
2 EMITTER passive Emitter terminal of the PNP transistor (Top View pin 2); the datasheet gives the device-level absolute maximum emitter-base voltage VEBO as -5.0 V.
3 COLLECTOR passive Collector terminal of the PNP transistor (Top View pin 3); the datasheet gives the device-level absolute maximum collector-base voltage VCBO as -60 V and collector current IC as -600 mA.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10µA, IC=0 2
Base cutoff current IBL -50 nA VCE=-30V, VBE=-0.5V 2
Collector cutoff current ICEX -50 nA VCE=-30V, VBE=-0.5V 2
Collector cutoff current ICBO -10 nA VCB=-50V, IE=0 2
Collector cutoff current ICBO -10 µA VCB=-50V, IE=0, TJ=125°C 2
DC current gain hFE 100 IC=-1.0mA, VCE=-10V 2
DC current gain hFE 100 300 IC=-150mA, VCE=-10V 2
DC current gain hFE 50 IC=-500mA, VCE=-10V 2
Collector-emitter saturation voltage VCE(sat) -0.4 V IC=-150mA, IB=-15mA 2
Collector-base capacitance Ccbo 8 pF VCB=-10V, IE=0, f=1MHz 2
Emitter-base capacitance Cebo 30 pF VEB=-2V, IC=0, f=1MHz 2
Current-gain-bandwidth product fT 200 MHz IC=-50mA, VCE=-20V, f=100MHz 2
Delay time td 10 ns VCC=-30V, VEB=-0.5V, IC=-150mA, IB1=-15mA 2
Turn-off time toff 100 ns VCC=-6V, IC=-150mA, IB1=IB2=-15mA 2
Fall time tf 30 ns VCC=-6V, IC=-150mA, IB1=IB2=-15mA 2
Maximum power dissipation (Note 1) PD 225 mW Note 1: transistor mounted on FR-4 board 70 x 60 x 1mm 1
Collector-emitter voltage VCEO -60 V 1
Collector-base voltage VCBO -60 V 1
Emitter-base voltage VEBO -5 V 1
Collector current, continuous IC -600 mA 1

CAD (KiCad official)

  • Symbol: MMBT2907A_R1_00001
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt2907a-r1-00001-etched.step / mmbt2907a-r1-00001-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2907a-r1-00001.step / mmbt2907a-r1-00001.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (7 pp, sha256 246c24116d997d83, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF