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MMBT2907A-MS

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT2907A-MS

MSKSEMI · Bipolar (BJT) · SOT-23

MMBT2907A-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the base-emitter reverse cut-off current IEBO is specified at VEB=-3V with a maximum of -10 nA.
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V at IE=-10μA with IC=0.
3 COLLECTOR passive Collector terminal of the PNP transistor; rated at a collector-emitter voltage VCEO of -60 V and a continuous collector current IC of -600 mA.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -60 V IC=-10μA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -60 V IC=-10mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10μA,IC=0 2
Collector cut-off current ICBO -20 nA VCB=-50V,IE=0 2
Base cut-off current IEBO -10 nA VEB=-3V, IC=0 2
Collector cut-off current ICEX -50 nA VCE=-30 V, VBE(off)=-0.5V 2
DC current gain hFE(1) 100 300 VCE=-10V,IC=-150mA 2
DC current gain hFE(2) 75 VCE=-10V,IC=-0.1mA 2
DC current gain hFE(3) 100 VCE=-10V,IC=-1mA 2
DC current gain hFE(5) 50 VCE=-10V,IC=-500mA 2
Collector-emitter saturation voltage VCE(sat) -0.4 V IC=-150mA,IB=-15mA 2
Collector-emitter saturation voltage VCE(sat) -1.6 V IC=-500mA,IB=-50mA 2
Base-emitter saturation voltage VBE(sat) -1.3 V IC=-150mA,IB=-15mA 2
Base-emitter saturation voltage VBE(sat) -2.6 V IC=-500mA,IB=-50mA 2
Transition frequency fT 200 MHz VCE=-20V,IC=-50mA,f=100MHz 2
Delay time td 10 ns VCE=-30V,IC=-150mA,B1=-15mA 2
Rise time tr 25 ns 2
Storage time tS 225 ns VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA 2
Fall time tf 60 ns 2
Collector-base voltage VCBO -60 V Ta=25℃ 2
Collector-emitter voltage VCEO -60 V Ta=25℃ 2
Emitter-base voltage VEBO -5 V Ta=25℃ 2
Collector current (continuous) IC -600 mA Ta=25℃ 2
Total device dissipation PD 250 mW Ta=25℃ 2
Thermal resistance junction to ambient RθJA 500 ℃/W 2
Junction temperature TJ 150 ℃ 2
Storage temperature Tstg -55 150 ℃ 2

CAD (KiCad official)

  • Symbol: MMBT2907A-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt2907a-ms-etched.step / mmbt2907a-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2907a-ms.step / mmbt2907a-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 a4a07de7a6fda67a, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF