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MMBT2907A-AU_R1_000A2

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PANJIT International Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT2907A-AU_R1_000A2

PANJIT International · Bipolar (BJT) · SOT-23

MMBT2907A-AU_R1_000A2 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor; the datasheet limits the emitter-base voltage to VEBO -5.0 V and the continuous collector current to -600 mA.
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base breakdown voltage is V(BR)EBO -5.0 V minimum at IE = -10 µA.
3 COLLECTOR passive Collector terminal of the PNP transistor; the datasheet limits the collector-emitter voltage to VCEO -60 V and the collector-base voltage to VCBO -60 V.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC=-10mA, IB=0 2
Collector-Base Breakdown Voltage V(BR)CBO -60 V IC=-10µA, IE=0 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µA, IC=0 2
Base Cutoff Current IBL -50 nA VCE=-30V, VEB=-0.5V 2
Collector Cutoff Current ICEX -50 nA VCE=-30V, VEB=-0.5V 2
Collector Cutoff Current ICBO -10 nA VCE=-50V, IE=0 2
Collector Cutoff Current ICBO -10 µA VCE=-50V, IE=0, TJ=125°C 2
DC Current Gain hFE 75 IC=-0.1mA, VCE=-10V 2
DC Current Gain hFE 100 IC=-1.0mA, VCE=-10V 2
DC Current Gain hFE 100 300 IC=-10mA, VCE=-10V 2
DC Current Gain hFE 50 IC=-500mA, VCE=-10V 2
Collector-Emitter Saturation Voltage VCE(SAT) -0.4 V IC=-150mA, IB=-15mA 2
Collector-Emitter Saturation Voltage VCE(SAT) -1.6 V IC=-500mA, IB=-50mA 2
Base-Emitter Saturation Voltage VBE(SAT) -1.3 V IC=-150mA, IB=-15mA 2
Base-Emitter Saturation Voltage VBE(SAT) -2.6 V IC=-500mA, IB=-50mA 2
Collector-Base Capacitance CCBO 8 pF VCB=-10V, IE=0, f=1MHz 2
Emitter-Base Capacitance CEBO 30 pF VCB=-2V, IC=0, f=1MHz 2
Current Gain-Bandwidth Product fT 200 MHz IC=-50mA, VCE=-20V, f=100MHz 2
Turn-On Time ton 45 ns VCC=-30V, VBE=-0.5V, IC=-150mA, IB=-15mA 2
Delay Time td 10 ns VCC=-30V, VBE=-0.5V, IC=-150mA, IB=-15mA 2
Rise Time tr 40 ns VCC=-30V, VBE=-0.5V, IC=-150mA, IB1=-15mA 2
Turn-Off Time toff 100 ns VCC=-6V, IC=-150mA, IB1=IB2=-15mA 2
Storage Time ts 80 ns VCC=-6V, IC=-150mA, IB1=IB2=-15mA 2
Fall Time tf 30 ns VCC=-6V, IC=-150mA, IB1=IB2=-15mA 2
Collector-Emitter Voltage VCEO -60 V 1
Collector-Base Voltage VCBO -60 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current-Continuous IC -600 mA 1
Max Power Dissipation PTOT 225 mW Transistor mounted on FR-4 board 70 x 60 x 1 mm (Note 1) 1
Storage Temperature TSTG -55 150 °C 1
Junction Temperature TJ -55 150 °C 1
Thermal Resistance, Junction to Ambient RθJA 556 °C/W 1

CAD (KiCad official)

  • Symbol: MMBT2907A-AU_R1_000A2
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt2907a-au-r1-000a2-etched.step / mmbt2907a-au-r1-000a2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2907a-au-r1-000a2.step / mmbt2907a-au-r1-000a2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (7 pp, sha256 8facfec1d8ed83f8, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF