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MMBT2907A-6AF

Public Made by Adom

by adom

FOSAN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT2907A-6AF

FOSAN · Bipolar (BJT) · SOT-23

MMBT2907A-6AF from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; emitter-base voltage limit is -5 V (VEBO) and the base is driven with IB = -15 mA to -50 mA in the saturation test conditions.
2 E passive Emitter of the PNP transistor; emitter-base breakdown voltage is -5 V minimum (BVEBO at IE = -10 uA).
3 C passive Collector of the PNP transistor; VCBO is -60 V, VCEO is -60 V for the MMBT2907A-6AF, and continuous collector current is -600 mA maximum.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO -60 V IC= -10uA, IE=0 2
Collector-Emitter Breakdown Voltage (MMBT2907A-6AF column) BVCEO -60 V IC= -1mA, IB=0 2
Emitter-Base Breakdown Voltage BVEBO -5 V IE= -10uA, IC=0 2
Collector-Base Leakage Current ICBO -100 nA VCB= -50V, IE=0 2
Collector-Emitter Leakage Current ICEX -100 nA VCE= -35V, VBE=0.5V 2
Emitter-Base Leakage Current IEBO -100 nA VEB= -4V, IC=0 2
DC Current Gain (IC=-150mA row) HFE 100 300 VCE= -10V, IC= -150mA 2
DC Current Gain (IC=-0.1mA row) HFE 30 VCE= -10V, IC= -0.1mA 2
DC Current Gain (IC=-500mA row) HFE 30 VCE= -10V, IC= -500mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.6 V IC= -500mA, IB= -50mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.4 V IC= -150mA, IB= -15mA 2
Base-Emitter Saturation Voltage VBE(sat) -2.6 V IC= -500mA, IB= -50mA 2
Base-Emitter Saturation Voltage VBE(sat) -1.3 V IC= -150mA, IB= -15mA 2
Transition Frequency fT 200 MHZ VCE= -20V, IC= -20mA 2
Delay Time td 10 ns VCC= -30V, VBE=0.5V, IC= -150mA, IB1= -15mA 2
Rise Time tr 25 ns VCC=-30V, VBE=0.5V, IC= -150mA, IB1= -15mA 2
Storage Time ts 225 ns VCC= -30V, IC= -150mA, IB1=IB2= -15mA 2
Fall Time tf 60 ns VCC= -30V, IC= -150mA, IB1=IB2= -15mA 2
Collector-Base Voltage VCBO -60 V MMBT2907A-6AF column 1
Collector-Emitter Voltage VCEO -60 V MMBT2907A-6AF column 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current IC -600 mA 1
Power dissipation PC 250 mW Ta=25℃ 1
Junction and Storage Temperature TJ,Tstg -55 150 ℃ 1
Thermal Resistance Junction-Ambient RΘJA 500 ℃/W 1

CAD (KiCad official)

  • Symbol: MMBT2907A-6AF
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt2907a-6af-etched.step / mmbt2907a-6af-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2907a-6af.step / mmbt2907a-6af.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (4 pp, sha256 b3a8d2c34979dc87, retrieved 2026-10-21, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF