MMBT2222LT1G

onsemi · Bipolar (BJT) · SOT-23

MMBT2222LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	BASE	input	Base terminal of the NPN transistor; the datasheet gives base-emitter saturation voltage limits of 1.3 V max (MMBT2222) and 1.2 V max (MMBT2222A) at IC = 150 mA, IB = 15 mA.
2	EMITTER	passive	Emitter terminal of the NPN transistor; emitter-base breakdown voltage V(BR)EBO is rated at 5.0 V min (MMBT2222L) and 6.0 V min (MMBT2222AL), and VEBO is 5.0 V and 6.0 V respectively.
3	COLLECTOR	passive	Collector terminal of the NPN transistor; continuous collector current is rated 600 mAdc and collector-emitter voltage VCEO is 30 Vdc (MMBT2222L) or 40 Vdc (MMBT2222AL).

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	SOT-23
Category	Transistors/Thyristors
Pins	3

CAD (KiCad official)

Symbol: MMBT2222LT1G
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23 (KiCad packages3D, STEP)
3D model files: mmbt2222lt1g-etched.step / mmbt2222lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2222lt1g.step / mmbt2222lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (10 pp, sha256 35f0095c400dbe03, retrieved 2026-10-09, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

# MMBT2222LT1G

**onsemi** · Bipolar (BJT) · SOT-23

MMBT2222LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet gives base-emitter saturation voltage limits of 1.3 V max (MMBT2222) and 1.2 V max (MMBT2222A) at IC = 150 mA, IB = 15 mA. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; emitter-base breakdown voltage V(BR)EBO is rated at 5.0 V min (MMBT2222L) and 6.0 V min (MMBT2222AL), and VEBO is 5.0 V and 6.0 V respectively. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; continuous collector current is rated 600 mAdc and collector-emitter voltage VCEO is 30 Vdc (MMBT2222L) or 40 Vdc (MMBT2222AL). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `MMBT2222LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbt2222lt1g-etched.step` / `mmbt2222lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt2222lt1g.step` / `mmbt2222lt1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/mmbt2222lt1-d.pdf) (10 pp, sha256 `35f0095c400dbe03`, retrieved 2026-10-09, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbt2222lt1g-datasheet.pdf)