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MMBT2222AQ

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Yangzhou Yangjie Elec Tech Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT2222AQ

Yangzhou Yangjie Elec Tech · Bipolar Transistors - BJT · SOT-23

MMBT2222AQ from Yangzhou Yangjie Elec Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO max 6 V and VCBO max 75 V.
2 E passive Emitter of the NPN transistor; VEBO max 6 V with respect to base.
3 C passive Collector of the NPN transistor; VCEO max 40 V, VCBO max 75 V, continuous IC max 600 mA.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 75 V Ta=25℃ 1
Collector-Emitter Voltage VCEO 40 V Ta=25℃ 1
Emitter-Base Voltage VEBO 6 V Ta=25℃ 1
Collector Current -Continuous IC 600 mA Ta=25℃ 1
Total Device Dissipation PD 300 mW Ta=25℃ 1
Junction Temperature Tj -55 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Collector-base breakdown voltage V(BR)CBO 75 V IC=10uA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 40 V IC =10mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10μA,IC=0 2
Collector cut-off current ICEX 10 nA VCE=60V, VBE=3V 2
Base cut-off current ICBO 100 nA VCE=60V, IC =0 2
Emitter cut-off current IEBO 100 nA VEB=3 V, IC =0 2
DC current gain hFE 35 VCE=10V,IC=0.1mA 2
DC current gain hFE 50 VCE=10V,IC=1mA 2
DC current gain hFE 75 VCE=10V,IC=10mA 2
DC current gain hFE 100 300 VCE=10V,IC=150mA 2
DC current gain hFE 40 VCE=10V,IC=500mA 2
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=150mA,IB=15mA 2
Collector-emitter saturation voltage VCE(sat) 1 V IC=500mA,IB=50mA 2
Base-emitter saturation voltage VBE(sat) 0.6 1.2 V IC=150mA,IB=15mA 2
Base-emitter saturation voltage VBE(sat) 2 V IC=500mA,IB=50mA 2
Transition frequency fT 300 MHz VCE=20V,IC=20mA,f=100MHz 2
Delay time td 10 ns VCC=30V, VBE(off)=-0.5V, IC=150mA, IB1=15mA 2
Rise time tr 25 ns VCC=30V, VBE(off)=-0.5V, IC=150mA, IB1=15mA 2
Storage time ts 225 ns VCC=30V,IC=150mA,IB1=IB2=15mA 2
Fall time tf 60 ns VCC=30V,IC=150mA,IB1=IB2=15mA 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 1

CAD (KiCad official)

  • Symbol: MMBT2222AQ
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt2222aq-etched.step / mmbt2222aq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2222aq.step / mmbt2222aq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (5 pp, sha256 d61debdfd798047d, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF