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MMBT2222ALT3G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT2222ALT3G

onsemi · Bipolar Transistors - BJT · SOT-23

MMBT2222ALT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN transistor; the datasheet gives no separate pin limit, and the emitter-base voltage is rated VEBO 6.0 Vdc for the MMBT2222A/SMMBT2222A variant.
2 EMITTER passive Emitter of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is at least 6.0 Vdc for the MMBT2222A variant.
3 COLLECTOR passive Collector of the NPN transistor; rated VCEO 40 Vdc and VCBO 75 Vdc for the MMBT2222AL variant, with continuous collector current IC of 600 mA and peak ICM of 1100 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Voltage VCEO 40 Vdc MMBT2222AL, SMMBT2222AL 1
Collector−Base Voltage VCBO 75 Vdc MMBT2222AL, SMMBT2222AL 1
Emitter−Base Voltage VEBO 6 Vdc MMBT2222AL, SMMBT2222AL 1
Collector Current − Continuous IC 600 mAdc 1
Collector Current − Peak ICM 1100 mAdc Note 3, reference SOA curve 1
Total Device Dissipation FR−5 Board PD 225 mW TA = 25°C, FR−5 board (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C, alumina substrate (Note 2) 1
Thermal Resistance, Junction−to−Ambient, FR−5 Board RθJA 556 °C/W FR−5 board (Note 1) 1
Thermal Resistance, Junction−to−Ambient, Alumina Substrate RθJA 417 °C/W Alumina substrate (Note 2) 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Collector−Emitter Breakdown Voltage V(BR)CEO 40 Vdc IC = 10 mAdc, IB = 0 2
Collector−Base Breakdown Voltage V(BR)CBO 75 Vdc IC = 10 Adc, IE = 0 2
Emitter−Base Breakdown Voltage V(BR)EBO 6 Vdc IE = 10 Adc, IC = 0 2
Collector Cutoff Current (ICEX) ICEX 10 nAdc VCE = 60 Vdc, VEB(off) = 3.0 Vdc, MMBT2222A 2
Collector Cutoff Current ICBO 0.01 Adc VCB = 60 Vdc, IE = 0 2
Collector Cutoff Current ICBO 10 Adc VCB = 60 Vdc, IE = 0, TA = 125°C 2
Emitter Cutoff Current IEBO 100 nAdc VEB = 3.0 Vdc, IC = 0 2
Base Cutoff Current IBL 20 nAdc VCE = 60 Vdc, VEB(off) = 3.0 Vdc 2
Collector−Emitter Saturation Voltage VCE(sat) 0.3 Vdc IC = 150 mAdc, IB = 15 mAdc 2
Collector−Emitter Saturation Voltage VCE(sat) 1 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Base−Emitter Saturation Voltage VBE(sat) 0.6 1.2 Vdc IC = 150 mAdc, IB = 15 mAdc 2
Base−Emitter Saturation Voltage VBE(sat) 2 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Current−Gain − Bandwidth Product fT 300 MHz IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz 2
Output Capacitance Cobo 8 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 25 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Input Impedance hie 2 8 k IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Input Impedance hie 0.25 1.25 k IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Voltage Feedback Ratio hre 8 X 10−4 IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Voltage Feedback Ratio hre 4 X 10−4 IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Small−Signal Current Gain hfe 50 300 IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Small−Signal Current Gain hfe 75 375 IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Output Admittance hoe 5 35 mhos IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 3
Output Admittance hoe 25 200 mhos IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 3
Collector Base Time Constant rb, Cc 150 ps IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz 3
Noise Figure NF 4 dB IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz 3
Delay Time td 10 ns VCC = 30 Vdc, VBE(off) = −0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc 3
Rise Time tr 25 ns VCC = 30 Vdc, VBE(off) = −0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc 3
Storage Time ts 225 ns VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc 3
Fall Time tf 60 ns VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc 3

CAD (KiCad official)

  • Symbol: MMBT2222ALT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt2222alt3g-etched.step / mmbt2222alt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2222alt3g.step / mmbt2222alt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 f961fdb4e585c6bf, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF