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MMBT2222A NPN Transistor

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General-purpose 40 V NPN bipolar transistor in SOT-23, the surface-mount 2N2222A.

transistorbjtnpnswitchingsot-23diodes
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Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
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docs mmbt2222a: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
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mmbt2222a-etched.fit.json mmbt2222a: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
mmbt2222a-etched.glb mmbt2222a: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
mmbt2222a-etched.step mmbt2222a: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
MMBT2222A.adom-lbr.json MMBT2222A: validated Fusion/EAGLE library + adom-lbr hub, generated from this page's KiCad sources · Ray 2mo ago
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MMBT2222A.lbr MMBT2222A: validated Fusion/EAGLE library + adom-lbr hub, generated from this page's KiCad sources · Ray 2mo ago
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MMBT2222A

Diodes Incorporated · Bipolar Transistor (BJT) · SOT-23

The MMBT2222A is the SOT-23 surface-mount version of the 2N2222A general-purpose NPN transistor. It handles up to 40 V and 600 mA continuous collector current, making it a common choice for low-power switching, relay and LED driving, and small-signal amplification.

Pinout

Pin Name Type Function
1 B input Base terminal of the NPN BJT. Drives collector current via hFE (typ 100-300 at IC=150mA, VCE=10V); VBE(sat) ~ 1.2V max at IC=150mA/IB=15mA. Absolute max VEBO = 6.0V, IBM = 200mA.
2 E passive Emitter terminal of the NPN BJT. Common return for collector and base currents. Absolute max VEBO = 6.0V. In a typical NPN switching/amplifier configuration this pin is tied to (or referenced from) the low-side supply.
3 C passive Collector terminal of the NPN BJT. Absolute max VCBO = 75V, VCEO = 40V; IC = 600mA continuous, ICM = 800mA peak. VCE(sat) < 0.3V at IC = 150mA, IB = 15mA.

Key specifications

Parameter Value
Type NPN bipolar transistor
Collector-emitter voltage (VCEO) 40 V
Collector current (IC) 600 mA continuous
hFE 100 to 300 at IC = 150 mA
Transition frequency (fT) 300 MHz min
Power dissipation 350 mW
Operating temperature -55 C to 150 C

Ordering variants

Same part, different packaging or reel option.

  • MMBT2222A-7-F
  • MMBT2222A-13-F

CAD (KiCad official)

  • Symbol: mmbt2222a.kicad_sym
  • Footprint: mmbt2222a.kicad_mod
  • 3D model: SOT-23 body from KiCad Package_TO_SOT_SMD/SOT-23.
  • 3D model files: mmbt2222a-etched.step / mmbt2222a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2222a.step / mmbt2222a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 02047f112848a0d2, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF