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MMBT2222A-MS

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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MMBT2222A-MS

MSKSEMI · Bipolar (BJT) · SOT-23

MMBT2222A-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet gives no separate pin-level limit, so the absolute maximum ratings apply (VEBO 6 V, IC 600 mA continuous).
2 EMITTER passive Emitter terminal of the NPN transistor; the datasheet gives no separate pin-level limit, so the absolute maximum ratings apply (VEBO 6 V, IC 600 mA continuous).
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet gives no separate pin-level limit, so the absolute maximum ratings apply (VCBO 75 V, VCEO 40 V, IC 600 mA continuous).

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 75 V IC= 10μA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 40 V IC= 10mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10μA, IC=0 2
Collector cut-off current ICBO 0.01 μA VCB=60V, IE=0 2
Emitter cut-off current IEBO 0.1 μA VEB= 3V, IC=0 2
DC current gain hFE(1) 100 300 VCE=10V, IC= 150mA 2
DC current gain hFE(2) 40 VCE=10V, IC= 0.1mA 2
DC current gain hFE(3) 42 VCE=10V, IC= 500mA 2
Collector-emitter saturation voltage VCE(sat) 1 V IC=500 mA, IB= 50mA 2
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=150 mA, IB=15mA 2
Base-emitter saturation voltage VBE(sat) 2 V IC=500 mA, IB= 50mA 2
Base-emitter saturation voltage VBE(sat) 1.2 V IC= 150 mA, IB=15mA 2
Transition frequency fT 300 MHz VCE=20V, IC= 20mA, f=100MHz 2
Delay time td 10 ns VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 2
Rise time tr 25 ns 2
Storage time tS 225 ns VCC=30V, IC=150mA IB1=-IB2=15mA 2
Fall time tf 60 ns 2
Collector-base voltage VCBO 75 V 2
Collector-emitter voltage VCEO 40 V 2
Emitter-base voltage VEBO 6 V 2
Collector current -Continuous IC 600 mA 2
Collector dissipation PC 300 mW 2
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ 2
Thermal resistance, junction to ambient R JA 417 ℃/W 2

CAD (KiCad official)

  • Symbol: MMBT2222A-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt2222a-ms-etched.step / mmbt2222a-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2222a-ms.step / mmbt2222a-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 10d81f5783acd28c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF