# MMBT2222A-G

**Changjing** · Bipolar (BJT) · SOT-23

MMBT2222A-G from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, so use the maximum ratings (emitter-base voltage VEBO 6 V). |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the maximum emitter-base voltage is VEBO = 6 V. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the maximum collector-emitter voltage is VCEO = 40 V and continuous collector current IC is 600 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CEO | 40 |  |  | V | IC= 10mA, IB=0 | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 75 |  |  | V | IC= 10μA, IE=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 |  |  | V | IE=10μA, IC=0 | 1 |
| DC current gain | hFE(2) | 40 |  |  |  | VCE=10V, IC= 0.1mA | 1 |
| DC current gain | hFE(1) | 100 |  | 300 |  | VCE=10V, IC= 150mA | 1 |
| DC current gain | hFE(3) | 42 |  |  |  | VCE=10V, IC= 500mA | 1 |
| Transition frequency | fT | 300 |  |  | MHz | VCE=20V, IC= 20mA, f=100MHz | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 1 | V | IC=500 mA, IB= 50mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.3 | V | IC=150 mA, IB=15mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 2 | V | IC=500 mA, IB= 50mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.2 | V | IC=150 mA, IB=15mA | 1 |
| Collector cut-off current | ICBO |  |  | 0.01 | μA | VCB=60V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 0.1 | μA | VEB= 3V, IC=0 | 1 |
| Delay time | td |  |  | 10 | ns |  | 1 |
| Rise time | tr |  |  | 25 | ns | VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA | 1 |
| Storage time | tS |  |  | 225 | ns |  | 1 |
| Fall time | tf |  |  | 60 | ns | VCC=30V, IC=150mA IB1=-IB2=15mA | 1 |
| Collector-base voltage | VCBO |  |  | 75 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | 40 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | 6 | V |  | 1 |
| Collector current, continuous | IC |  |  | 600 | mA |  | 1 |
| Collector dissipation | PC |  |  | 300 | mW |  | 1 |
| Thermal resistance, junction to ambient | RΘJA |  |  | 417 | ℃/W |  | 1 |
| Junction temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `MMBT2222A-G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbt2222a-g-etched.step` / `mmbt2222a-g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt2222a-g.step` / `mmbt2222a-g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586189216418312192) (4 pp, sha256 `2f14d0d9d0232cea`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbt2222a-g-datasheet.pdf)