component
MMBT2222A-AU_R1_000A1
Public Made by Adomby adom
PANJIT International Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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MMBT2222A-AU_R1_000A1
PANJIT International · Bipolar (BJT) · SOT-23
MMBT2222A-AU_R1_000A1 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN transistor; the emitter-base voltage limit VEBO is 6 V. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor; the emitter-base reverse voltage rating is 6 V (VEBO). |
| 3 | Collector | passive | Collector terminal of the NPN transistor; rated for 40 V collector-emitter voltage (VCEO) and 600 mA continuous collector current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PANJIT International |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | V | IB=0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=10uA, IC=0 | 2 | ||
| Base Cutoff Current | IBL | 20 | nA | VCE=60V, VEB=-3.0V | 2 | ||
| Collector Cutoff Current | ICEX | 10 | nA | VCE=60V, VEB=-3.0V | 2 | ||
| Collector Cutoff Current | ICBO | 10 | uA | VCB=60V, IE=0, TA=125C | 2 | ||
| DC Current Gain | hFE | 100 | 300 | IC=150mA, VCE=10V (Note 2) | 2 | ||
| DC Current Gain | hFE | 40 | IC=500mA, VCE=10V (Note 2) | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.3 | V | IC=150mA, IB=15mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 1 | V | IC=500mA, IB=50mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.6 | 1.2 | V | IC=150mA, IB=15mA | 2 | |
| Base-Emitter Saturation Voltage | VBE(SAT) | 2 | V | IC=500mA, IB=50mA | 2 | ||
| Collector-Base Capacitance | CCBO | 8 | pF | VCB=10V, IE=0, f=1MHz | 2 | ||
| Emitter-Base Capacitance | CEBO | 25 | pF | VEB=0.5V, IC=0, f=1MHz | 2 | ||
| Delay Time | td | 10 | ns | VCC=30V, VEB=-0.5V, IC=150mA, IB1=15mA | 2 | ||
| Rise Time | tr | 25 | ns | VCC=30V, VEB=-0.5V, IC=150mA, IB1=15mA | 2 | ||
| Collector-Emitter Voltage | VCEO | 40 | V | 1 | |||
| Collector-Base Voltage | VCBO | 75 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 6 | V | 1 | |||
| Collector Current - Continuous | IC | 600 | mA | 1 | |||
| Max. Power Dissipation | PTOT | 225 | mW | Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. (Note 1) | 1 | ||
| Junction Temperature | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 556 | °C/W | Transistor mounted on FR-5 board (Note 1) | 1 |
CAD (KiCad official)
- Symbol:
MMBT2222A-AU_R1_000A1 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt2222a-au-r1-000a1-etched.step/mmbt2222a-au-r1-000a1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt2222a-au-r1-000a1.step/mmbt2222a-au-r1-000a1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PANJIT International datasheet (7 pp, sha256
122e3ae68cab319d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).