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MMBT2222A-AU_R1_000A1

PANJIT International · Bipolar (BJT) · SOT-23

MMBT2222A-AU_R1_000A1 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the NPN transistor; the emitter-base voltage limit VEBO is 6 V.
2 Emitter passive Emitter terminal of the NPN transistor; the emitter-base reverse voltage rating is 6 V (VEBO).
3 Collector passive Collector terminal of the NPN transistor; rated for 40 V collector-emitter voltage (VCEO) and 600 mA continuous collector current.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IB=0 2
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10uA, IC=0 2
Base Cutoff Current IBL 20 nA VCE=60V, VEB=-3.0V 2
Collector Cutoff Current ICEX 10 nA VCE=60V, VEB=-3.0V 2
Collector Cutoff Current ICBO 10 uA VCB=60V, IE=0, TA=125C 2
DC Current Gain hFE 100 300 IC=150mA, VCE=10V (Note 2) 2
DC Current Gain hFE 40 IC=500mA, VCE=10V (Note 2) 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.3 V IC=150mA, IB=15mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 1 V IC=500mA, IB=50mA 2
Base-Emitter Saturation Voltage VBE(SAT) 0.6 1.2 V IC=150mA, IB=15mA 2
Base-Emitter Saturation Voltage VBE(SAT) 2 V IC=500mA, IB=50mA 2
Collector-Base Capacitance CCBO 8 pF VCB=10V, IE=0, f=1MHz 2
Emitter-Base Capacitance CEBO 25 pF VEB=0.5V, IC=0, f=1MHz 2
Delay Time td 10 ns VCC=30V, VEB=-0.5V, IC=150mA, IB1=15mA 2
Rise Time tr 25 ns VCC=30V, VEB=-0.5V, IC=150mA, IB1=15mA 2
Collector-Emitter Voltage VCEO 40 V 1
Collector-Base Voltage VCBO 75 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current - Continuous IC 600 mA 1
Max. Power Dissipation PTOT 225 mW Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. (Note 1) 1
Junction Temperature TJ -55 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Thermal Resistance, Junction to Ambient RθJA 556 °C/W Transistor mounted on FR-5 board (Note 1) 1

CAD (KiCad official)

  • Symbol: MMBT2222A-AU_R1_000A1
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt2222a-au-r1-000a1-etched.step / mmbt2222a-au-r1-000a1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2222a-au-r1-000a1.step / mmbt2222a-au-r1-000a1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (7 pp, sha256 122e3ae68cab319d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF