component
MMBFJ113
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
mmbfj113: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -21,6 +21,29 @@ MMBFJ113 from onsemi, in a SOT-23. Pinout and pin descriptions extracted from th | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain−Gate Voltage | VDG | | | 35 | V | | 1 |+| Gate−Source Voltage | VGS | -35 | | | V | | 1 |+| Forward Gate Current | IGF | | | 50 | mA | | 1 |+| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Total Device Dissipation | PD | | | 350 | mW | MMBFJ111/MMBFJ112/MMBFJ113 SOT-23, Note 4 | 1 |+| Derate Above 25°C | | | 2.8 | | mW/°C | MMBFJ111/MMBFJ112/MMBFJ113 SOT-23, Note 4 | 1 |+| Thermal Resistance, Junction−to−Ambient | RθJA | | | 357 | °C/W | MMBFJ111/MMBFJ112/MMBFJ113 SOT-23, Note 4 | 1 |+| Gate−Source Breakdown Voltage | V(BR)GSS | -35 | | | V | IG = −1.0 A, VDS = 0 | 2 |+| Gate Reverse Current | IGSS | | | -1 | nA | VGS = −15 V, VDS = 0 | 2 |+| Gate−Source Cut−Off Voltage (113) | VGS(off) | -0.5 | | -3 | V | VDS = 5 V, ID = 1.0 A | 2 |+| Drain Cutoff Leakage Current | ID(off) | | | 1 | nA | VDS = 5.0 V, VGS = −10 V | 2 |+| Zero−Gate Voltage Drain Current (113) | IDSS | 2 | | | mA | VDS = 15 V, VGS = 0 | 2 |+| Drain−Source On Resistance (113) | rDS(on) | | | 100 | Ω | VDS ≤ 0.1 V, VGS = 0 | 2 |+| Drain−Gate & Source−Gate On Capacitance | Cdg(on)/Csg(on) | | | 28 | pF | VDS = 0, VGS = 0, f = 1.0 MHz | 2 |+| Drain−Gate Off Capacitance | Cdg(off) | | | 5 | pF | VDS = 0, VGS = −10 V, f = 1.0 MHz | 2 |+| Source−Gate Off Capacitance | Csg(off) | | | 5 | pF | VDS = 0, VGS = −10 V, f = 1.0 MHz | 2 |+ ## CAD (KiCad official) - Symbol: `MMBFJ113`
page.json+200−1@@ -150,6 +150,205 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "f62cadc2a2d4f52f",+ "rows": [+ {+ "name": "Drain−Gate Voltage",+ "symbol": "VDG",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate−Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -35,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Forward Gate Current",+ "symbol": "IGF",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Junction Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 350,+ "conditions": "MMBFJ111/MMBFJ112/MMBFJ113 SOT-23, Note 4",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Derate Above 25°C",+ "symbol": "",+ "kind": "thermal",+ "unit": "mW/°C",+ "min": null,+ "typ": 2.8,+ "max": null,+ "conditions": "MMBFJ111/MMBFJ112/MMBFJ113 SOT-23, Note 4",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction−to−Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 357,+ "conditions": "MMBFJ111/MMBFJ112/MMBFJ113 SOT-23, Note 4",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate−Source Breakdown Voltage",+ "symbol": "V(BR)GSS",+ "kind": "electrical",+ "unit": "V",+ "min": -35,+ "typ": null,+ "max": null,+ "conditions": "IG = −1.0 A, VDS = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Reverse Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VGS = −15 V, VDS = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate−Source Cut−Off Voltage (113)",+ "symbol": "VGS(off)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.5,+ "typ": null,+ "max": -3,+ "conditions": "VDS = 5 V, ID = 1.0 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Cutoff Leakage Current",+ "symbol": "ID(off)",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 5.0 V, VGS = −10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero−Gate Voltage Drain Current (113)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "mA",+ "min": 2,+ "typ": null,+ "max": null,+ "conditions": "VDS = 15 V, VGS = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain−Source On Resistance (113)",+ "symbol": "rDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS ≤ 0.1 V, VGS = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain−Gate & Source−Gate On Capacitance",+ "symbol": "Cdg(on)/Csg(on)",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 28,+ "conditions": "VDS = 0, VGS = 0, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain−Gate Off Capacitance",+ "symbol": "Cdg(off)",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS = 0, VGS = −10 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Source−Gate Off Capacitance",+ "symbol": "Csg(off)",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS = 0, VGS = −10 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +390,4 @@ "visibility": { "public": true }-}+}