component
MMBFJ113
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownMMBFJ113
onsemi · MOSFETs · SOT-23
MMBFJ113 from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | DRAIN | passive | Drain terminal; the datasheet states source and drain are interchangeable, and drain-gate voltage is limited to 35 V (VDG). |
| 2 | SOURCE | passive | Source terminal; the datasheet states source and drain are interchangeable, and gate-source voltage is rated −35 V (VGS). |
| 3 | GATE | input | Gate terminal; forward gate current is limited to 50 mA (IGF), and gate reverse current is 1.0 nA max at VGS = −15 V with VDS = 0. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain−Gate Voltage | VDG | 35 | V | 1 | |||
| Gate−Source Voltage | VGS | -35 | V | 1 | |||
| Forward Gate Current | IGF | 50 | mA | 1 | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Total Device Dissipation | PD | 350 | mW | MMBFJ111/MMBFJ112/MMBFJ113 SOT-23, Note 4 | 1 | ||
| Derate Above 25°C | 2.8 | mW/°C | MMBFJ111/MMBFJ112/MMBFJ113 SOT-23, Note 4 | 1 | |||
| Thermal Resistance, Junction−to−Ambient | RθJA | 357 | °C/W | MMBFJ111/MMBFJ112/MMBFJ113 SOT-23, Note 4 | 1 | ||
| Gate−Source Breakdown Voltage | V(BR)GSS | -35 | V | IG = −1.0 A, VDS = 0 | 2 | ||
| Gate Reverse Current | IGSS | -1 | nA | VGS = −15 V, VDS = 0 | 2 | ||
| Gate−Source Cut−Off Voltage (113) | VGS(off) | -0.5 | -3 | V | VDS = 5 V, ID = 1.0 A | 2 | |
| Drain Cutoff Leakage Current | ID(off) | 1 | nA | VDS = 5.0 V, VGS = −10 V | 2 | ||
| Zero−Gate Voltage Drain Current (113) | IDSS | 2 | mA | VDS = 15 V, VGS = 0 | 2 | ||
| Drain−Source On Resistance (113) | rDS(on) | 100 | Ω | VDS ≤ 0.1 V, VGS = 0 | 2 | ||
| Drain−Gate & Source−Gate On Capacitance | Cdg(on)/Csg(on) | 28 | pF | VDS = 0, VGS = 0, f = 1.0 MHz | 2 | ||
| Drain−Gate Off Capacitance | Cdg(off) | 5 | pF | VDS = 0, VGS = −10 V, f = 1.0 MHz | 2 | ||
| Source−Gate Off Capacitance | Csg(off) | 5 | pF | VDS = 0, VGS = −10 V, f = 1.0 MHz | 2 |
CAD (KiCad official)
- Symbol:
MMBFJ113 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbfj113-etched.step/mmbfj113-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbfj113.step/mmbfj113.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (11 pp, sha256
f62cadc2a2d4f52f, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).