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MMBF2201NT1-HXY

HXY MOSFET · MOSFETs · SOT-323

MMBF2201NT1-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet limits the gate-source voltage VGS to ±12 V and specifies a threshold of 0.4 to 1.0 V at 250 µA.
2 D passive Drain terminal; the datasheet limits the drain-source voltage to 20 V and the continuous drain current to 2 A.
3 S passive Source terminal; it is the reference for VGS and the body-diode maximum continuous forward current IS is 1.0 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-323
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID 2 A 1
Maximum Power Dissipation PD 0.3 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID =250μA 2
Zero gate voltage drain current IDSS 1 µA VDS =18V,VGS = 0V 2
Gate-body leakage current IGSS -100 100 nA VGS =±12V, VDS = 0V 2
Gate threshold voltage (note2) VGS(th) 0.4 0.7 1 V VDS =VGS, ID =250μA 2
Drain-source on-resistance (note2) RDS(on) 85 mΩ VGS =4.5V, ID =2.0A; VGS =2.5V, ID =0.3A 2
Maximum Continuous Drain to Source Diode Forward Current IS 1 A 2
Diode forward voltage VSD 1.2 V IS=1.0A, VGS =0V 2
Drain-source on-resistance (highlight) RDS(ON) 55 mΩ VGS=4.5V 1
Drain-source on-resistance (highlight) RDS(ON) 85 mΩ VGS=2.5V 1
Thermal Resistance, Junction-to-Ambient θJA 125 ℃/W Note 2 1

CAD (KiCad official)

  • Symbol: MMBF2201NT1-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: mmbf2201nt1-hxy-etched.step / mmbf2201nt1-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbf2201nt1-hxy.step / mmbf2201nt1-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 73fad7b065dbaab1, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF