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Contents

README

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MMBF170-7-F

Diodes Incorporated · MOSFETs · SOT-23

MMBF170-7-F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate: control input of the N-channel enhancement-mode MOSFET; VGS(th) = 0.8 V min / 3.0 V max (VDS = VGS, ID = 250 µA); continuous gate-source voltage ±20 V, pulsed ±40 V; gate-body leakage IGSS ≤ ±10 nA at VGS = ±15 V.
2 S passive Source: N-channel MOSFET source terminal; serves as voltage reference for VGS and VDS; continuous drain current rating of 200 mA applies between drain and source.
3 D passive Drain: N-channel MOSFET drain terminal; VDSS = 60 V max; continuous ID = 200 mA (TA = +25 °C); RDS(ON) = 5.0 Ω max at VGS = 10 V / ID = 200 mA, 5.3 Ω max at VGS = 4.5 V / ID = 50 mA; pulsed IDM = 800 mA (10 µs, 1% duty cycle); zero-gate-voltage drain leakage IDSS ≤ 1.0 µA at VDS = 60 V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: MMBF170-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbf170-7-f-etched.step / mmbf170-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbf170-7-f.step / mmbf170-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 739faec475ae17a3, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF