component
MMBF0201NL-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBF0201NL-HXY
HXY MOSFET · MOSFETs · SOT-23
MMBF0201NL-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, rated for VGS = ±12 V and specified with RDS(ON) below 60 mΩ at VGS = 4.5 V, with operation at gate voltages as low as 2.5 V. |
| 2 | D | passive | Drain terminal, rated for VDS = 20 V with continuous drain current ID = 2.3 A and pulsed drain current IDM = 16 A. |
| 3 | S | passive | Source terminal, the reference for the VGS ±12 V rating and the body diode forward current limit IS = 3.3 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | 22 | V | VGS=0V, ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 54 | 72 | mΩ | VGS=2.5V, ID=2.0A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 48 | 60 | mΩ | VGS=4.5V, ID=2.3A | 2 | |
| Total Gate Charge | Qg | 2.9 | 5 | nC | VDS=10V, ID=2.3A, VGS=4.5V | 2 | |
| Diode Forward Voltage (Note 3) | VSD | 0.75 | 1.2 | V | VGS=0V, IS=2.3A; Pulse test: pulse width ≤ 300μs, duty cycle ≤ 2% | 2 | |
| Diode Forward Current (Note 2) | IS | 3.3 | A | 2 | |||
| Drain-Source Voltage | VDS | 20 | V | TA=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ unless otherwise noted | 1 | |
| Drain Current-Continuous | ID | 2.3 | A | TA=25℃ unless otherwise noted | 1 | ||
| Drain Current-Pulsed (Note 1) | IDM | 16 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 0.9 | W | TA=25℃ unless otherwise noted | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Note 2) | θJA | 139 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
MMBF0201NL-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbf0201nl-hxy-etched.step/mmbf0201nl-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbf0201nl-hxy.step/mmbf0201nl-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
b8491dd9c4e1e0e9, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).