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MLS65R580D

Public Made by Adom

by adom

Minos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MLS65R580D

Minos · MOSFETs · TO-252

MLS65R580D from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±30 V and threshold VGS(th) of 2 to 4 V at VDS=VGS, ID=250µA.
2 D passive Drain (middle lead, common with the mounting tab); VDSS 650 V, continuous ID 8 A at Tc=25℃, pulsed IDM 24 A.
3 S passive Source; body diode continuous current IS 18 A and pulsed ISM 24 A as stated for the source-drain diode.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage VDSS 650 V 1
Drain Current (continuous) at Tc=25℃ ID 8 A Tc=25℃ 1
Drain Current (pulsed) IDM 24 A 1
Gate to Source Voltage VGS -30 30 V 1
Total Dissipation at Tc=25℃ Ptot 26 W Tc=25℃ 1
Max. Operating Junction Temperature Tj 150 ℃ 1
Single Pulse Avalanche Energy Eas 140 mj 1
Drain-source Voltage VDS 650 V VGS =0V, ID=250µA 2
Static Drain-to-Source on-Resistance RDS(on) 0.5 0.58 Ω VGS=10V,ID=4.0A 2
Gated Threshold Voltage VGS(th) 2 4 V VDS=VGS, D=250µA 2
Drain-Source Leakage Current IDSS 1 µA VDS=650V, VGS= 0V 2
Gate-Source Forward Leakage IGSS(F) 100 nA VGS = +30V 2
Gate-Source Reverse Leakage IGSS(R) -100 nA VGS = -30V 2
Input Capacitance Ciss 410.8 pF VGS = 0V, VDS = 25, Vf = 1.0MHz 2
Output Capacitance Coss 41.7 pF VGS = 0V, VDS = 25, Vf = 1.0MHz 2
Reverse Transfer Capacitance Crss 3.1 pF VGS = 0V, VDS = 25, Vf = 1.0MHz 2
Total Gate Charge Qg 8.6 nC ID =5.0A, VDD =400V, VGS = 10V 2
Gate-Source Charge Qgs 2.2 nC ID =5.0A, VDD =400V, VGS = 10V 2
Gate-Drain Charge Qgd 3.8 nC ID =5.0A, VDD =400V, VGS = 10V 2
Turn-on Delay Time td(on) 26.4 nS ID =4.0A, VDD =400V, VGS =10, VRG=25Ω 2
Turn-on Rise Time tr 17.9 nS ID =4.0A, VDD =400V, VGS =10, VRG=25Ω 2
Turn-off Delay Time td(off) 56.2 nS ID =4.0A, VDD =400V, VGS =10, VRG=25Ω 2
Turn-off Fall Time tf 14 nS ID =4.0A, VDD =400V, VGS =10, VRG=25Ω 2
Continuous Source Current (Body Diode) IS 18 A TC=25 °C 2
Maximum Pulsed Current (Body Diode) ISM 24 A 2
Diode Forward Voltage VSD 1.3 V ID=8A, VGS=0V(Note4) 2
Reverse Recovery Time Trr 214.3 ns IS=4A, Tj = 25°C, dIF/dt=100A/us, VGS=0V 2
Reverse Recovery Charge Qrr 1.7 nC IS=4A, Tj = 25°C, dIF/dt=100A/us, VGS=0V 2

CAD (KiCad official)

  • Symbol: MLS65R580D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mls65r580d-etched.step / mls65r580d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mls65r580d.step / mls65r580d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (8 pp, sha256 94bb2fa78718bdfa, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF