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MLG75T65FDK

Public Made by Adom

by adom

Minos IGBT Transistors / Modules, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MLG75T65FDK

Minos · IGBT Transistors / Modules · TO-247

MLG75T65FDK from Minos, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate drive input of the IGBT, with a maximum gate-emitter voltage of ±30 V and a gate threshold voltage of 4.7 V min to 6.2 V max at VCE = VGE, IC = 1 mA.
2 C passive Collector, rated for VCES of 650 V and a collector current of 75 A at TC = 100°C (150 A at TC = 25°C), with the anti-parallel diode cathode connected here.
3 E passive Emitter, the IGBT power return, which is also the anti-parallel diode anode, carrying up to 75 A continuous at TC = 100°C.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-247
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: MLG75T65FDK
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: mlg75t65fdk-etched.step / mlg75t65fdk-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mlg75t65fdk.step / mlg75t65fdk.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (13 pp, sha256 d9f6dad581d7cdca, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF