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MJE350G

JSMSEMI · Bipolar Transistors - BJT · TO-126

MJE350G from JSMSEMI, in a TO-126. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter; emitter-base voltage VEBO is -3 V max and collector current IC is -0.5 A continuous.
2 C passive Collector (also connected to the tab); VCBO and VCEO are -300 V, IC is -0.5 A continuous, and power dissipation is 20 W at TC=25℃.
3 B passive Base; the VCE(sat) is -1.0 V max at IC=-50 mA and IB=-5 mA.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package TO-126
Category Triode/MOS Tube/Transistor
Pins 3

CAD (KiCad official)

  • Symbol: MJE350G
  • Footprint: Package_TO_SOT_THT:TO-126-3_Vertical
  • 3D model: TO-126 (KiCad packages3D, STEP)
  • 3D model files: mje350g-etched.step / mje350g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mje350g.step / mje350g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (2 pp, sha256 72c520bfed9f3a2d, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF