# MJD340

**Shikues** · Bipolar (BJT) · TO-252

MJD340 from Shikues, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN silicon epitaxial planar transistor, which the datasheet describes for switching and amplifier applications; no pin-specific limit is stated. |
| 2 | Collector | passive | Collector terminal of the NPN transistor, which the datasheet describes as especially suitable for AF-driver stages and low power output stages; no pin-specific voltage or current limit is stated. |
| 3 | Emitter | passive | Emitter terminal of the NPN transistor; no pin-specific limit is stated in the datasheet. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 300 |  |  | V | IC=100uA | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 300 |  |  | V | IC=2mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 |  |  | V | IE=100uA | 1 |
| Collector cut-off current | ICBO |  |  | 0.5 | µA | VCB=35V | 1 |
| Emitter cut-off current | IEBO |  |  | 0.5 | µA | VEB=6V | 1 |
| DC current gain | hFE | 60 |  | 300 |  | VCE=10V IC=10mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.5 | V | IC=800mA, IB=80mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1 | V | IC=800mA, IB=80mA | 1 |
| Transition frequency | fT | 50 |  |  | MHz | VCE=10V, Ic=-50mA f=30MHZ | 1 |
| Collector-base voltage | VCBO |  |  | 300 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | 300 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | 5 | V |  | 1 |
| Collector current, continuous | IC |  |  | 500 | mA |  | 1 |
| Collector power dissipation | PC |  |  | 625 | mW |  | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `MJD340`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mjd340-etched.step` / `mjd340-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mjd340.step` / `mjd340.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shikues datasheet](docs/mjd340-datasheet.pdf) (3 pp, sha256 `f67960cd9936f534`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mjd340-datasheet.pdf)