component
MJD31C
Public Made by Adomby adom
Changjing Bipolar (BJT), TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 24d ago |
| mjd31c-etched.glb | 17d ago |
| mjd31c-etched.step | 17d ago |
| mjd31c-hero.glb | 17d ago |
| mjd31c-hero.overlay.json | 17d ago |
| mjd31c.glb | 24d ago |
| mjd31c.kicad_mod | 24d ago |
| mjd31c.kicad_sym | 24d ago |
| mjd31c.lbr | 24d ago |
| mjd31c.step | 24d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MJD31C
Changjing · Bipolar (BJT) · TO-252-2L
MJD31C from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet gives no separate base current limit, and the emitter-base breakdown voltage V(BR)EBO is specified at 5 V minimum. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor, rated for a collector-base voltage VCBO of 100 V, a collector-emitter voltage VCEO of 100 V, and continuous collector current IC of 3 A. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor, with the emitter-base voltage VEBO rated at 5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 100 | V | IC= 1mA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | VCEO(sus) | 100 | V | IC= 30mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE= 1mA, IC=0 | 1 | ||
| Collector cut-off current | ICES | 20 | μA | VCE=100V, VEB=0 | 1 | ||
| Collector cut-off current | ICEO | 50 | μA | VCE= 60V, IB= 0 | 1 | ||
| Emitter cut-off current | IEBO | 1 | mA | VEB=5V, IC=0 | 1 | ||
| DC current gain | hFE(1) | 25 | VCE= 4V, IC= 1A | 1 | |||
| DC current gain | hFE(2) | 15 | 75 | VCE=4 V, IC= 3A | 1 | ||
| Transition frequency | fT | 3 | MHZ | VCE=10V , IC=0.5A,fT=1KHz | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 1.2 | V | IC=3A, IB=0.375A | 1 | ||
| Base-emitter voltage | VBE(on) | 1.8 | V | VCE= 4V, IC=3A | 1 | ||
| Collector-Base Voltage | VCBO | 100 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 100 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current -Continuous | IC | 3 | A | 1 | |||
| Collector Power Dissipation | PC | 1.25 | W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -65 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
MJD31C - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
mjd31c-etched.step/mjd31c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mjd31c.step/mjd31c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (3 pp, sha256
943fe0022b98e97a, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).