component
MJD2955
Public Made by Adomby adom
Changjing Bipolar (BJT), TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MJD2955
Changjing · Bipolar (BJT) · TO-252-2L
MJD2955 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet's saturation tests drive it at IB = -0.4 A for IC = -4 A and IB = -3.3 A for IC = -10 A. |
| 2 | COLLECTOR | passive | Collector terminal rated for -10 A continuous collector current, -60 V collector-emitter voltage (VCEO) and -70 V collector-base voltage (VCBO), with 1.25 W collector power dissipation. |
| 3 | EMITTER | passive | Emitter terminal; the emitter-base voltage is rated at -5 V (VEBO) and the junction and storage temperature range is -55 to +150 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -70 | V | IC=-1mA,IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -60 | V | IC=-200 mA,IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-1mA,IC=0 | 2 | ||
| Collector cut-off current | ICBO | -0.02 | mA | VCB=-70V,IE=0 | 2 | ||
| Collector cut-off current | ICEO | -50 | µA | VCB=-30V,IB=0 | 2 | ||
| Emitter cut-off current | IEBO | -0.5 | mA | VEB=-5V,IC=0 | 2 | ||
| DC current gain | hFE(1) | 20 | 100 | VCE=-4V,IC=-4A | 2 | ||
| DC current gain | hFE(2) | 5 | VCE=-4V,IC=-10A | 2 | |||
| Collector-emitter saturation voltage | VCE(sat)(1) | -1.1 | V | IC=-4A, IB=-0.4A | 2 | ||
| Collector-emitter saturation voltage | VCE(sat)(2) | -8 | V | IC=-10A, IB=-3.3A | 2 | ||
| Base-emitter voltage | VBE | -1.8 | V | VCE=-4V, IC=-4A | 2 | ||
| Transition frequency | fT | 2 | MHz | VCE=-10V,IC=-0.5A,f=500KHZ | 2 | ||
| Collector current - continuous | IC | -10 | A | 1 | |||
| Collector-base voltage | VCBO | -70 | V | 1 | |||
| Collector-emitter voltage | VCEO | -60 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector power dissipation | PC | 1.25 | W | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
MJD2955 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
mjd2955-etched.step/mjd2955-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mjd2955.step/mjd2955.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
64058eb6a990a241, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MJD2955
**Changjing** · Bipolar (BJT) · TO-252-2L
MJD2955 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet's saturation tests drive it at IB = -0.4 A for IC = -4 A and IB = -3.3 A for IC = -10 A. |
| 2 | COLLECTOR | passive | Collector terminal rated for -10 A continuous collector current, -60 V collector-emitter voltage (VCEO) and -70 V collector-base voltage (VCBO), with 1.25 W collector power dissipation. |
| 3 | EMITTER | passive | Emitter terminal; the emitter-base voltage is rated at -5 V (VEBO) and the junction and storage temperature range is -55 to +150 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -70 | | | V | IC=-1mA,IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | -60 | | | V | IC=-200 mA,IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | | | V | IE=-1mA,IC=0 | 2 |
| Collector cut-off current | ICBO | | | -0.02 | mA | VCB=-70V,IE=0 | 2 |
| Collector cut-off current | ICEO | | | -50 | µA | VCB=-30V,IB=0 | 2 |
| Emitter cut-off current | IEBO | | | -0.5 | mA | VEB=-5V,IC=0 | 2 |
| DC current gain | hFE(1) | 20 | | 100 | | VCE=-4V,IC=-4A | 2 |
| DC current gain | hFE(2) | 5 | | | | VCE=-4V,IC=-10A | 2 |
| Collector-emitter saturation voltage | VCE(sat)(1) | | | -1.1 | V | IC=-4A, IB=-0.4A | 2 |
| Collector-emitter saturation voltage | VCE(sat)(2) | | | -8 | V | IC=-10A, IB=-3.3A | 2 |
| Base-emitter voltage | VBE | | | -1.8 | V | VCE=-4V, IC=-4A | 2 |
| Transition frequency | fT | | 2 | | MHz | VCE=-10V,IC=-0.5A,f=500KHZ | 2 |
| Collector current - continuous | IC | | | -10 | A | | 1 |
| Collector-base voltage | VCBO | | | -70 | V | | 1 |
| Collector-emitter voltage | VCEO | | | -60 | V | | 1 |
| Emitter-base voltage | VEBO | | | -5 | V | | 1 |
| Collector power dissipation | PC | | | 1.25 | W | | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 | | 150 | ℃ | | 1 |
## CAD (KiCad official)
- Symbol: `MJD2955`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `mjd2955-etched.step` / `mjd2955-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mjd2955.step` / `mjd2955.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589835930900201472) (5 pp, sha256 `64058eb6a990a241`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mjd2955-datasheet.pdf)