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MJD127T4G

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MJD127T4G

MSKSEMI · Bipolar (BJT) · TO-252

MJD127T4G from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP device, with internal resistors R1 (typ. 5 kΩ) and R2 (typ. 210 Ω) shown in the datasheet schematic; emitter-base voltage limit is -5 V (VEBO).
2 COLLECTOR passive Collector terminal, rated for -8 A continuous collector current, -100 V VCBO and VCEO, and 1.5 W collector power dissipation.
3 EMITTER passive Emitter terminal; a damper diode is built in between emitter and collector (E-C), per the datasheet features.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -100 V Ta=25℃ 2
Collector-emitter voltage VCEO -100 V Ta=25℃ 2
Emitter-base voltage VEBO -5 V Ta=25℃ 2
Collector current, continuous IC -8 A Ta=25℃ 2
Collector power dissipation PC 1.5 W Ta=25℃ 2
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ Ta=25℃ 2
Collector-base breakdown voltage V(BR)CBO -100 V IC=-1mA,IE=0 3
Collector-emitter breakdown voltage V(BR)CEO -100 V IC=-30mA,IB=0 3
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10mA,IC=0 3
Collector cut-off current ICBO -10 µA VCB=-100V,IE=0 3
Collector-emitter cut-off current ICEO -10 µA VCE=-50V,IB=0 3
Emitter cut-off current IEBO -2 mA VEB=-5V,IC=0 3
DC current gain hFE(1) 1000 12000 VCE=-4V,IC=-4A 3
DC current gain hFE(2) 100 VCE=-4V,IC=-8A 3
Collector-emitter saturation voltage VCE(sat) 1 -2 V IC=-4A,IB=-16mA; pulse test: pulse width≤380µs, duty cycle≤2% 3
Collector-emitter saturation voltage VCE(sat) 2 -4 V IC=-8A,IB=-80mA; pulse test: pulse width≤380µs, duty cycle≤2% 3
Base-emitter saturation voltage VBE(sat) -4.5 V IC=-8A,IB=-80mA; pulse test: pulse width≤380µs, duty cycle≤2% 3
Base-emitter voltage VBE -2.8 V VCE=-4V,IC=-4A; pulse test: pulse width≤380µs, duty cycle≤2% 3
Collector output capacitance Cob 300 pF VCB=-10V,IE=0,f=0.1MHz 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC COLLECTOR POWER DISSIPATION BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE PC (W) 4

CAD (KiCad official)

  • Symbol: MJD127T4G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mjd127t4g-etched.step / mjd127t4g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mjd127t4g.step / mjd127t4g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (6 pp, sha256 6e2247ea82e826d9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF