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MJD127T4G-JSM

Public Made by Adom

by adom

JSMSEMI Darlington Transistors, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MJD127T4G-JSM

JSMSEMI · Darlington Transistors · TO-252

MJD127T4G-JSM from JSMSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base of the PNP Darlington transistor; Emitter-Base voltage limited to -5 V (VEBO) and emitter cutoff current IEBO max -2 mA at VEB=-5V.
2 Collector passive Collector of the PNP Darlington transistor (also connected to the tab); VCEO -100 V, VCBO -100 V, continuous collector current -8 A.
3 Emitter passive Emitter of the PNP Darlington transistor; the datasheet shows an internal diode between emitter and collector.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -100 V 1
Collector-Emitter Voltage VCEO -100 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current-Continuous IC -8 A 1
Total Power Dissipation PC 1.75 W Ta=25℃ 1
Collector Power Dissipation PC 20 W TC=25℃ 1
Thermal Resistance, Junction to Ambient Rth j-a 71.4 ℃/W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Collector-Emitter Breakdown Voltage V(BR)CEO -100 V IC= -30mA; IB= 0 2
Collector-Emitter Saturation Voltage VCE(sat)-1 -2 V IC=-4A; IB= -16mA 2
Collector-Emitter Saturation Voltage VCE(sat)-2 -4 V IC=-8A; IB= -80mA 2
Base-Emitter Saturation Voltage VBE(sat) -4.5 V IC=-8A; IB= -80mA 2
Base-Emitter voltage VBE(ON) -2.8 V IC= -4A; VCE= -4V 2
Collector Cutoff Current ICEO -10 uA VCE=-50V; IE= 0 2
Emitter Cutoff Current IEBO -2 mA VEB=-5V; IC= 0 2
DC Current Gain hFE1 1000 12000 IC= -4A; VCE=- 4V 2
DC Current Gain hFE2 100 IC=-8A; VCE= -4V 2
Current-Gain, Bandwidth Product fT 4 MHz IC=-3A; VCE=- 4V 2
Output Capacitance COB 300 pF IE=0; VCB= -10V; f= 1.0MHz 2

CAD (KiCad official)

  • Symbol: MJD127T4G-JSM
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mjd127t4g-jsm-etched.step / mjd127t4g-jsm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mjd127t4g-jsm.step / mjd127t4g-jsm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (3 pp, sha256 c96e4f4a11d25c2c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF