component
MJD127T4G-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMJD127T4G-HXY
HXY MOSFET · Bipolar (BJT) · TO-252-2L
MJD127T4G-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP Darlington; the datasheet gives base-emitter saturation at IC=-8A with IB=-80mA and base-emitter voltage at VCE=-4V, IC=-4A. |
| 2 | COLLECTOR | passive | Collector terminal rated for VCBO and VCEO of -100V, continuous collector current of -4A, and collector power dissipation of 1.5W. |
| 3 | EMITTER | passive | Emitter terminal rated for VEBO of -5V, with a built-in damper diode between emitter and collector. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -100 | V | IC=-1mA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -100 | V | IC=-30mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10mA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | -1 | µA | VCB=-100V,IE=0 | 1 | ||
| Collector-emitter cut-off current | ICEO | -10 | µA | VCE=-50V,IB=0 | 1 | ||
| Emitter cut-off current | IEBO | -2 | mA | VEB=-5V,IC=0 | 1 | ||
| DC current gain | hFE(1) | 1000 | 12000 | VCE=-4V,IC=-4A | 1 | ||
| DC current gain | hFE(2) | 100 | VCE=-4V,IC=-8A | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) 1 | -2 | V | IC=-4A,IB=-16mA (pulse test: pulse width ≤380µs, duty cycle ≤2%) | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) 2 | -4 | V | IC=-8A,IB=-80mA (pulse test: pulse width ≤380µs, duty cycle ≤2%) | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -4 | V | IC=-8A,IB=-80mA (pulse test: pulse width ≤380µs, duty cycle ≤2%) | 1 | ||
| Base-emitter voltage | VBE | -2.8 | V | VCE=-4V,IC=-4A | 1 | ||
| Collector output capacitance | Cob | 300 | pF | VCB=-10V,IE=0,f=0.1MHz | 1 | ||
| Collector-base voltage | VCBO | -100 | V | 1 | |||
| Collector-emitter voltage | VCEO | -100 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current, continuous | IC | -4 | A | Continuous | 1 | ||
| Collector power dissipation | PC | 1.5 | W | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
MJD127T4G-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
mjd127t4g-hxy-etched.step/mjd127t4g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mjd127t4g-hxy.step/mjd127t4g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
08f8f2e4ac900862, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).