component
MJD122T4G
Public Made by Adomby adom
MSKSEMI Bipolar Transistors - BJT, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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|---|---|
| docs | 1d ago |
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| mjd122t4g-etched.glb | 1d ago |
| mjd122t4g-etched.step | 1d ago |
| mjd122t4g-hero.glb | 1d ago |
| mjd122t4g-hero.overlay.json | 1d ago |
| mjd122t4g.glb | 1d ago |
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MJD122T4G
MSKSEMI · Bipolar Transistors - BJT · TO-252
MJD122T4G from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the NPN transistor, with emitter-base voltage rated at -5 V (VEBO) and base current stated in the test conditions (IB = 16 mA to 80 mA). |
| 2 | COLLECTOR | passive | Collector of the NPN transistor, rated for collector-base voltage -100 V (VCBO) and continuous collector current -6 A (IC). |
| 3 | EMITTER | passive | Emitter of the NPN transistor, with a built-in damper diode between emitter and collector (E-C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 100 | V | Ic=1mA,IE=0 | 3 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 100 | V | Ic=30mA,IB=0 | 3 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=3mA,IC=0 | 3 | ||
| Collector cut-off current | ICBO | 10 | µA | VCB=100V,IE=0 | 3 | ||
| Collector-emitter cut-off current | ICEO | 10 | µA | VCE=50V,IE=0 | 3 | ||
| Emitter cut-off current | IEBO | 2 | mA | VEB=5V,IC=0 | 3 | ||
| DC current gain | hFE(2) | 1000 | 12000 | VCE=4V,IC=4A | 3 | ||
| DC current gain | hFE(3) | 100 | VCE=4V,IC=8A | 3 | |||
| Collector-emitter saturation voltage | VCE(sat)(1) | 2 | V | IC=4A,IB=16mA | 3 | ||
| Collector-emitter saturation voltage | VCE(sat)(2) | 4 | V | IC=8A,IB=80mA | 3 | ||
| Base-emitter saturation voltage | VBE(sat) | 4.5 | V | IC=8A,IB=80mA | 3 | ||
| Base-emitter voltage | VBE | 2.8 | V | VCE=4V,IC=4A | 3 | ||
| Collector output capacitance | Cob | 200 | pF | VCB=10V,IE=0,f=0.1MHz | 3 | ||
| Collector-base voltage (absolute maximum) | VCBO | -100 | V | 2 | |||
| Collector-emitter voltage (absolute maximum) | VCEO | -100 | V | 2 | |||
| Emitter-base voltage (absolute maximum) | VEBO | -5 | V | 2 | |||
| Collector current, continuous (absolute maximum) | IC | -6 | A | Continuous | 2 | ||
| Collector current, pulse (absolute maximum) | ICP | -10 | A | Pulse | 2 | ||
| Collector power dissipation | PC | 1.25 | W | 2 | |||
| Operating junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
MJD122T4G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mjd122t4g-etched.step/mjd122t4g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mjd122t4g.step/mjd122t4g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (6 pp, sha256
9036cfb63b13d69a, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).