component
MJD122-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar Transistors - BJT, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownMJD122-HXY
HXY MOSFET · Bipolar Transistors - BJT · TO-252-2L
MJD122-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN Darlington transistor; the datasheet lists built-in resistors R1 typ. =5 K and R2 typ. =210 on the base circuit. |
| 2 | COLLECTOR | passive | Collector terminal with a collector-base breakdown voltage V(BR)CBO of 100 V minimum at Ic=1mA and collector power dissipation PC of 1.5 W. |
| 3 | EMITTER | passive | Emitter terminal with an emitter-base breakdown voltage V(BR)EBO of 5 V minimum at IE=3mA, and a built-in damper diode between E and C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 100 | V | Ic=1mA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 100 | V | Ic=30mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=3mA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | 10 | µA | VCB=100V,IE=0 | 1 | ||
| Collector-emitter cut-off current | ICEO | 10 | µA | VCE=50V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 2 | mA | VEB=5V,IC=0 | 1 | ||
| DC current gain | hFE(2) | 1000 | 12000 | VCE=4V,IC=4A | 1 | ||
| DC current gain | hFE(3) | 100 | VCE=4V,IC=8A | 1 | |||
| Collector-emitter saturation voltage | VCE(sat)（1） | 2 | V | IC=4A,IB=16mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)（2） | 4 | V | IC=8A,IB=80mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 4.5 | V | IC=8A,IB=80mA | 1 | ||
| Base-emitter voltage | VBE | 2.8 | V | VCE=4V,IC=4A | 1 | ||
| Collector output capacitance | Cob | 200 | pF | VCB=10V,IE=0,f=0.1MHz | 1 | ||
| Collector-base voltage | VCBO | 100 | V | 1 | |||
| Collector-emitter voltage | VCEO | 100 | V | 1 | |||
| Emitter-base voltage | VEBO | 5 | V | 1 | |||
| Collector power dissipation | PC | 1.5 | W | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Internal base-emitter resistor R1 | R1 | 5 | K | 1 | |||
| Internal base-emitter resistor R2 | R2 | 210 | 1 |
CAD (KiCad official)
- Symbol:
MJD122-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
mjd122-hxy-etched.step/mjd122-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mjd122-hxy.step/mjd122-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
6bbe7b0ff5de8387, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).