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MJD117

Public Made by Adom

by adom

Changjing Bipolar (BJT), TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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MJD117

Changjing · Bipolar (BJT) · TO-252-2L

MJD117 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives the emitter-base voltage limit VEBO as -5 V and the emitter-base breakdown V(BR)EBO as -5 V minimum at IE=-5 mA.
2 COLLECTOR passive Collector terminal of the PNP transistor; limits are VCBO -100 V, VCEO -100 V, collector current IC -2 A, and collector power dissipation PC 1.75 W.
3 EMITTER passive Emitter terminal of the PNP transistor; the datasheet specifies the emitter-base voltage limit VEBO as -5 V.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -100 V IC=-1mA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -100 V IC=-30mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-5mA,IC=0 2
Collector cut-off current ICBO -10 μA VCB=-80V,IE=0 2
Emitter cut-off current IEBO -2 mA VEB=-5V,IC=0 2
DC current gain hFE(1) hFE(1) 500 VCE=-3V, IC=-0.5A 2
DC current gain hFE(2) minimum hFE(2) 1000 VCE=-3V, IC=-2A 2
DC current gain hFE(2) maximum hFE(2) 12000 VCE=-3V, IC=-2A 2
DC current gain hFE(3) hFE(3) 200 VCE=-3V, IC=-4A 2
Collector-emitter saturation voltage VCE(sat) -2 V IC=-2A,IB=-8mA 2
Collector-emitter saturation voltage VCE(sat) -3 V IC=-4A,IB=-40mA 2
Base-emitter saturation voltage VBE(sat) -4 V IC=-4A,IB=-40mA 2
Base-emitter voltage VBE -2.8 V VCE=-3V, IC=-2A 2
Collector output capacitance Cob 200 pF VCB=-10V,IE=0, f=0.1MHz 2
Transition frequency fT 25 MHz VCE=-10V,IC=-0.75A, f=1MHz 2
Collector-base voltage VCBO -100 V Ta=25℃ 1
Collector-emitter voltage VCEO -100 V Ta=25℃ 1
Emitter-base voltage VEBO -5 V Ta=25℃ 1
Collector current IC -2 A Ta=25℃ 1
Collector power dissipation PC 1.75 W Ta=25℃ 1
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ 1
Thermal resistance from junction to ambient RθJA 72 ℃/W 1

CAD (KiCad official)

  • Symbol: MJD117
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: mjd117-etched.step / mjd117-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mjd117.step / mjd117.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 64ab33de635fd5f1, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF