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MJ15025G-JSM

Public Made by Adom

by adom

JSMSEMI Bipolar Transistors - BJT, TO-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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MJ15025G-JSM

JSMSEMI · Bipolar Transistors - BJT · TO-3

MJ15025G-JSM from JSMSEMI, in a TO-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base pin; the datasheet rates base current at -5 A and VEBO at -5 V (open collector).
2 E passive Emitter pin, shown with the arrow on the PNP symbol; the datasheet rates VEBO at -5 V (open collector).
3 C passive Collector, connected to the metal case/flange; the datasheet rates IC at -16 A (-30 A peak) and VCEO at -250 V for MJ15025.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package TO-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -400 V Open emitter 1
Collector-emitter voltage VCEO -250 V Open base 1
Emitter-base voltage VEBO -5 V Open collector 1
Collector current IC -16 A 1
Collector current-peak ICM -30 A 1
Base current IB -5 A 1
Total power dissipation PD 250 W TC=25 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -65 200 °C 1
Thermal resistance junction to case Rth j-c 0.7 °C/W 1
Collector-emitter sustaining voltage VCEO(SUS) -250 V IC=0.1A; IB=0 2
Collector-emitter saturation voltage VCEsat-1 -1.4 V IC=8A; IB=0.8A 2
Collector-emitter saturation voltage VCEsat-2 -4 V IC=16A; IB=3.2A 2
Base-emitter on voltage VBE -2.2 V IC=8A; VCE=4V 2
Collector cut-off current ICEO -0.5 mA VCE=200V; IB=0 2
Collector cut-off current ICEX -0.25 mA VCE=250V; VBE(off)=1.5V 2
Emitter cut-off current IEBO -0.5 mA VEB=5V; IC=0 2
DC current gain hFE-1 15 60 IC=8A; VCE=4V 2
DC current gain hFE-2 5 IC=16A; VCE=4V 2
Second breakdown collector current with base forward biased Is/b -5 A VCE=50Vdc, t=0.5 s, Nonrepetitive 2
Second breakdown collector current with base forward biased Is/b -2 A VCE=80Vdc, t=0.5 s, Nonrepetitive 2
Output capacitance COB 500 pF IE=0; VCB=10V; f=1.0MHz 2
Transition frequency fT 4 MHz IC=1A; VCE=10V; f=1.0MHz 2

CAD (KiCad official)

  • Symbol: MJ15025G-JSM
  • Footprint: Package_TO_SOT_THT:TO-3
  • 3D model: TO-3 (KiCad packages3D, STEP)
  • 3D model files: mj15025g-jsm-etched.step / mj15025g-jsm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mj15025g-jsm.step / mj15025g-jsm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (4 pp, sha256 fd9f3bb3472feea3, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF