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MJ15015G

onsemi · Darlington Transistors · TO-3

MJ15015G from onsemi, in a TO-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the MJ15015G NPN transistor, used to control collector current.
2 EMITTER passive Emitter terminal of the MJ15015G NPN transistor.
3 CASE (COLLECTOR) passive Metal case, internally connected to the collector per the TO-204 (TO-3) Style 1 outline.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 120 Vdc 1
Collector-Base Voltage VCBO 200 Vdc 1
Collector-Emitter Voltage Base Reversed Biased VCEV 200 Vdc 1
Emitter-Base Voltage VEBO 7 Vdc 1
Collector Current - Continuous IC 15 Adc 1
Base Current IB 7 Adc 1
Total Device Dissipation PD 180 W TC = 25C 1
Derate above 25C PD 1.03 W/C Derate above 25C 1
Operating and Storage Junction Temperature Range TJ, Tstg -65 200 C 1
Thermal Resistance, Junction-to-Case RJC 0.98 C/W MJ15015G, MJ15016G column 1
Collector-Emitter Sustaining Voltage VCEO(sus) 120 Vdc IC = 200 mAdc, IB = 0 2
Collector Cutoff Current ICEO 0.1 mAdc VCE = 60 Vdc, VBE(off) = 0 Vdc 2
Collector Cutoff Current ICEV 1 mAdc VCEV = Rated Value, VBE(off) = 1.5 Vdc 2
Collector Cutoff Current at TC=150C ICEV 6 mAdc VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150C 2
Emitter Cutoff Current IEBO 0.2 mAdc VEB = 7.0 Vdc, IC = 0 2
Second Breakdown Collector Current with Base Forward Biased IS/b 3 Adc t = 0.5 s non-repetitive, VCE = 60 Vdc 2
DC Current Gain hFE 10 70 IC = 4.0 Adc, VCE = 2.0 Vdc 2
DC Current Gain hFE 20 70 IC = 4.0 Adc, VCE = 4.0 Vdc 2
DC Current Gain hFE 5 IC = 10 Adc, VCE = 4.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 1.1 Vdc IC = 4.0 Adc, IB = 400 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) 3 Vdc IC = 10 Adc, IB = 3.3 Adc 2
Collector-Emitter Saturation Voltage VCE(sat) 5 Vdc IC = 15 Adc, IB = 7.0 Adc 2
Base-Emitter On Voltage VBE(on) 0.7 1.8 Vdc IC = 4.0 Adc, VCE = 4.0 Vdc 2
Current-Gain - Bandwidth Product fT 0.8 6 MHz IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz 2
Output Capacitance Cob 60 600 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing pet Second Breakdown Collector Current with Base Forward Biased (t = 0.5 s non−repetitive) 2N3055AG 2

CAD (KiCad official)

  • Symbol: MJ15015G
  • Footprint: Package_TO_SOT_THT:TO-3
  • 3D model: TO-3 (KiCad packages3D, STEP)
  • 3D model files: mj15015g-etched.step / mj15015g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mj15015g.step / mj15015g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 1e5e181cb46d7d80, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF