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MIC4605-2YMT-TR

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Microchip Tech Gate Drivers, TDFN-10-EP(2.5x2.5). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MIC4605-2YMT-TR

Microchip Tech · Gate Drivers · TDFN-10-EP(2.5x2.5)

MIC4605-2YMT-TR from Microchip Tech, in a TDFN-10-EP(2.5x2.5). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EN input Enable input: a logic high (VIH min 2.2 V) gives normal operation, and a logic low (VIL max 0.8 V) puts the device into Shutdown mode.
2 VDD power_in Input supply for the gate drivers, operating range 5.5 V to 16 V; decouple to VSS with a >0.1 µF capacitor.
3 HB power_in High-side bootstrap supply; an external bootstrap capacitor is required across HB and HS, and an on-board bootstrap diode connects VDD to HB.
4 HO output High-side drive output; connect to the gate of the external high-side power MOSFET.
5 HS passive High-side drive reference; connect to the source of the external high-side MOSFET and to the bottom of the bootstrap capacitor, with an operating voltage of -0.3 V to +85 V.
6 PWM input Single PWM input (MIC4605-2 only) that drives the high-side and low-side outputs out of phase.
7 NC unconnected No connect; this pin is not connected internally.
8 VSS power_in Driver reference supply input, generally connected to the power ground of the external circuitry.
9 LO output Low-side drive output; connect to the gate of the external low-side power MOSFET.
10 NC unconnected No connect; this pin is not connected internally.
11 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package TDFN-10-EP(2.5x2.5)
Category Motor Driver ICs
Pins 11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD Quiescent Current IDD 100 250 µA LI = HI = 0V 3
VDD Shutdown Current IDDSH 2.2 10 µA EN = 0V with HS = floating 3
VDD Shutdown Current IDDSH 25 50 µA EN = 0V 3
VDD Operating Current IDDO 170 500 µA f = 20 kHz 3
Total HB Quiescent Current IHB 35 75 µA LI = HI = 0V or LI = 0V and HI = 5V 3
Total HB Operating Current IHBO 50 400 µA f = 20 kHz 3
HB to VSS Quiescent Current IHBS 0.05 5 µA VHS = VHB = 90V 3
HB to VSS Operating Current IHBSO 30 300 µA f = 20 kHz 3
Low-Level Input Voltage VIL 0.8 V 3
High-Level Input Voltage VIH 2.2 V 3
Input Pull-Down Resistance (PWM) RI 50 130 250 kΩ PWM 4
VDD Falling Threshold VDDF 4 4.4 4.9 V 4
HB Falling Threshold VHBF 4 4.4 4.9 V 4
Low-Current Forward Voltage VDL 0.4 0.7 V IVDD-HB = 100 µA 4
High-Current Forward Voltage VDH 0.7 1 V IVDD-HB = 50 mA 4
Dynamic Resistance RD 2 5 Ω IVDD-HB = 50 mA 4
LO Low-Level Output Voltage VOLL 0.3 0.6 V ILO = 50 mA 4
LO High-Level Output Voltage VOHL 0.5 1 V ILO = -50 mA, VOHL = VDD, VLO 4
HO Low-Level Output Voltage VOLH 0.3 0.6 V IHO = 50 mA 4
HO High-Level Output Voltage VOHH 0.5 1 V IHO = -50 mA, VOHH = VHB, VHO 4
Delay from PWM Going High/LI Low to LO Going Low tLOOFF 35 75 ns 5
Delay from LO Off to HO Going High tHOON 35 75 ns 5
Delay from PWM Going Low/HI Low to HO Going Low tHOOFF 35 75 ns 5
Switch Node Voltage Threshold Signaling HO is Off VSWTH 1 2.2 4 V 5
Delay Between HO FET Being Considered Off to LO Turning On tLOON 35 75 ns 5
For HS Low/LI High, Delay from PWM/HI Low to LO Going HI tLOONHI 80 150 ns 5
Force LO On if VSWTH is Not Detected tSWTO 100 250 500 ns 5
Junction Operating Temperature Range TJ -40 125 °C 5
Storage Temperature Range TS -60 150 °C 5
Supply Voltage (VDD) [Decreasing VDD] VDD 5.25 16 V Decreasing VDD 3
Supply Voltage (VDD) [Increasing VDD] VDD 5.5 16 V Increasing VDD 3
Voltage on HS VHS -0.3 85 V 3
Voltage on HS (Repetitive Transient) VHS -2 90 V Repetitive transient < 5 µs 3
HS Slew Rate 50 V/ns 3
Supply Voltage (VDD, VHB, VHS) -0.3 18 V 3
Input Voltages (VLI, VHI, VEN) -0.3 V Max printed as VDD + 0.3V 3
Voltage on LO VLO -0.3 V Max printed as VDD + 0.3V 3
Voltage on HS (Continuous) -0.3 90 V 3
Voltage on HB 108 V 3
Average Current in VDD to HB Diode 100 mA 3
ESD Rating HBM 1 kV Human body model, 1.5 kΩ in series with 100 pF 3
ESD Rating MM 200 V 3
Thermal Resistance 10-Lead TDFN θJA 71.4 °C/W 5

CAD (KiCad official)

  • Symbol: MIC4605-2YMT-TR
  • Footprint: Package_DFN_QFN:DFN-10-1EP_2.6x2.6mm_P0.5mm_EP1.3x2.2mm
  • 3D model: TDFN-10-EP(2.5x2.5), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: mic4605-2ymt-tr-etched.step / mic4605-2ymt-tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mic4605-2ymt-tr.step / mic4605-2ymt-tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (34 pp, sha256 9d50d9f07993c95a, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF